Properties of highly conducting nitrogen-plasma-doped ZnSe:N thin films
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OpenAlex topics: Semiconductor Quantum Structures and Devices · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties
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References (27)
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1. K. Ohkawa, T. Karasawa and T. Mitsuyu,J. Cryst. Growth 111,797(1991).10.1016/0022-0248(91)91084-N ↗
2. R.M. Park, M.B. Troffer, CM. Rouleau, J.M. DePuydt and M.A. Haase,Appl. Phys. Lett. 57, 2127 (1990).10.1063/1.103919 ↗
3. M.A. Haase, J. Qiu, J.M. DePuydt and H. Cheng,Appl. Phys. Lett. 59, 1272 (1991).10.1063/1.105472 ↗
4. H. Jeon, J. Ding, W. Patterson, A.V. Nurmikko, W. Xie, D.C. Grillo, M. Kobayashi and R.L. Gunshor,Appl. Phys. Lett. 59, 3619(1991).10.1063/1.105625 ↗
5. S.Y. Wang, I. Kauksson, J. Simpson, H. Stewart, S.J.A. Adams, J.M. Wallace, Y. Kawakami, K.A. Prior and B.C. Cavenett,Appl. Phys. Lett. 61, 506 (1992).10.1063/1.107869 ↗
6. Z. Yu, J. Ren, B. Sneed, K.A. Bowers, K.J. Gossett, C. Boney,Y. Lansari, J.W. Cook, Jr., J.F. Schetzina, G.C. Hua and N. Otsuka,Appl. Phys. Lett. 61, 1266 (1992).10.1063/1.107613 ↗
7. W. Xie, D.C. Grillo, R.L. Gunshor, M. Kobayashi, G.C. Hua, N. Otsuka, H. Jeon, J. Ding and A.V. Nurmikko,Appl. Phys. Lett. 60, 463 (1992).10.1063/1.106635 ↗
8. H. Jeon, J. Ding, A.V. Nurmikko, W. Xie, M. Kobayashi and R.L. Gunshor,Appl. Phys. Lett. 60, 892 (1992).10.1063/1.106496 ↗
9. W. Xie, D.C. Grillo, R.L. Gunshor, M. Kobayashi, H. Jeon, J. Ding, A.V. Nurmikko, G.C. Hua and N. Otsuka,Appl. Phys. Lett. 60, 1999 (1992).10.1063/1.107123 ↗
10. J. Ren, K.A. Bowers, J.W. Cook, Jr. and J.F. Schetzina,J. Vac. Sci. Technol. B 10, 909 (1992).10.1116/1.586150 ↗
11. Y. Lansari, J. Ren, B. Sneed, K.A. Bowers, J.W. Cook, Jr. and J.F. Schetzina,Appl. Phys. Lett. 61, 2554 (1992).10.1063/1.108124 ↗
12. J. Qiu, J.M. DePuydt, H. Cheng and M.A. Haase,Appl. Phys. Lett. 59, 2992 (1991).10.1063/1.105821 ↗
13. I.S. Hauksson, J. Simpson, S.Y. Wang, K.A. Prior and B.C. Cavenett,Appl. Phys. Lett. 61, 2208 (1992).10.1063/1.108296 ↗
14. Ohkawa A. Ueno and T. Mitsuyu,J. Cryst. Growth 117,375 (1992).10.1016/0022-0248(92)90779-I ↗
15. D.J. Olego, Intl. Conf. on Solid State Devices and Materials (SSDM ’92), Tsukuba, Japan, 1992.
16. Z. Yang, K.A. Bowers, J. Ren, Y. Lansari, J.W. Cook, Jr. and J.F. Schetzina,Appl. Phys. Lett. 61, 2671 (1992).10.1063/1.108104 ↗
17. A bound exciton ionization energy of 24.9 meV was obtained by subtracting the (D°,X) peak energy from the band gap energy E g at 4.2K. The ZnSe band gap at 4.2K was determined from the binding energy of the free exciton (19.9 meV). The free exciton binding energy was obtained by measuring the energy separation of the ground state and first excited state of the free exciton (14.9 meV) in an undoped sample. This equals three quarters of the exciton binding energy, assuming a hydrogenic model applies.
18. E. Karttheuser, R. Evrard and F. Williams,Phys. Rev. B 21, 648 (1980).10.1103/PhysRevB.21.648 ↗
19. J.I. Pankove, Optical Processes in Semiconductors, (New York: Dover Publication Inc., 1975) p. 27.
20. N.W. Ashcroft and N.D. Mermin,Solid State Physics, (Philadelphia: Saunders College Press, 1876) pp. 577–580.
21. G. Burns,Solid State Physics, (Orlando: Academic Press, 1985) pp. 170–173.
22. E.W. Williams and R. Hall,Luminescence and the Light Emitting Diode, (Oxford: Pergaman Press, 1978) pp. 142–145.10.1016/B978-0-08-020441-3.50013-6 ↗
23. M. Jaros,Deep Levels in Semiconductors, (Bristol, U.K.: Adam Hilger Ltd, 1982) pp. 209–257.
24. V.l. Fistul,Heavily Doped Semiconductors, (New York: Plenum Press, 1969) pp. 249–280
25. D.J. Chadi and N. Troullier,Physica B 185,128(1993).10.1016/0921-4526(93)90226-V ↗
26. D.J. Chadi and K.J. Chang,Appl. Phys. Lett. 55, 575 (1989).10.1063/1.101837 ↗
27. D.J. Chadi,Appl. Phys. Lett. 59, 3589(1991).10.1063/1.105641 ↗