Post-growth Annealing of Cadmium Zinc Telluride Crystals for Room-Temperature Radiation Detectors
Source abstract
Abstract
We investigated the effects of post-growth annealing on cadmium zinc telluride crystals intended for use as room-temperature radiation detectors. Annealing under Cd vapor effectively eliminated Te inclusions. The material’s resistivity was lowered, and loss of Zn component was observed. Annealing under Cd + Zn vapors similarly removed Te inclusions. Furthermore, after exposure to the two vapors, we noted a change in the crystal surface morphology, i.e., formation of patterns of parallel lines. In contrast to annealing under Cd vapor alone, high resistivity was maintained after suitably controlling the Cd and Zn pressures.
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Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Chalcogenide Semiconductor Thin Films · Semiconductor Quantum Structures and Devices
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References (11)
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