Evaluation of Diffusion Barrier Between Pure Sn and Te
Source abstract
Abstract
An electroless Ni layer is often chosen as an effective diffusion barrier in thermoelectric modules. Thermal aging can form a thick layer of NiTe. This study investigates the growth kinetics of NiTe intermetallic compounds (IMCs). The apparent activation energy was determined to be 70.9 kJ/mol. Ni/Co was also selected as an alternative barrier because Co-Te did not form IMCs. Results show that Co can effectively suppress the voids formed at the interfaces. After high-temperature annealing, a very thin Ni-Te IMC formed between Co-P and Te.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Electronic Packaging and Soldering Technologies · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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