journal article·1992-07

Radiation damage effects on bipolar and MOS devices in X-Ray lithography

L. C. Hsia, T. Christensen

Journal of Electronic Materials· Volume 21· Issue 7
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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Integrated Circuits and Semiconductor Failure Analysis

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References (11)

Show source-provided references
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6. P. Lenahan and P. Dressendorfer, J. Appl. Phys.54, 1457 (1983).10.1063/1.332171 ↗
7. J. Silverman, R. Haelbich, W. Grobman and J. Warlaumont, Proc. SPIE,393, 99 (1983).10.1117/12.935100 ↗
8. S. Sze, “Physics of Semiconductor Devices,” 2nd Ed., Wiley, New York (1981).
9. E. Nicollian and J. Brews, “MOS Physics and Technology,” Wiley, New York (1982).
10. E. Snow, A. Grove and D. Fitzgerald, Proc. IEEE55, 1168 (1967).10.1109/PROC.1967.5776 ↗
11. C. Hsu, L. Wang, M. Wordeman and T. Ning, IEEE Electron Lett.10, 296 (1989).