Plasma damage in p-GaN
Source abstract
Abstract
The effect of Inductively Coupled Plasma H2 or Ar discharges on the breakdown voltage of p-GaN diodes was measured over a range of ion energies and fluxes. The main effect of plasma exposure is a decrease in net acceptor concentration to depths of 400–550 A. At high ion fluxes or energies there can be type conversion of the initially p-GaN surface. Post etch annealing at 900°C restores the initial conductivity.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (26)
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