journal article·2016-07

Drop Reliability of Epoxy-contained Sn-58 wt.%Bi Solder Joint with ENIG and ENEPIG Surface Finish Under Temperature and Humidity Test

Woo-Ram Myung, Yongil Kim, Kyung-Yeol Kim, Seung-Boo Jung

Journal of Electronic Materials· Volume 45· Issue 7
Publisher page

Abstract

The influence of two kinds of surface finish, namely electroless nickel immersion gold (ENIG) and electroless nickel electroless palladium immersion gold (ENEPIG), on the interfacial reactions and drop reliability of epoxy-enhanced Sn-58 wt.%Bi solder has been investigated after temperature–humidity storage tests. The chemical composition and morphology of intermetallic compounds (IMCs) were characterized by scanning electron microscopy, energy-dispersive x-ray spectroscopy, and electron probe microanalysis. Also, the mechanical reliability of solder joints was evaluated using board-level drop tests. The Sn-Bi epoxy solder/ENEPIG joint exhibited higher IMC growth rate than the Sn-Bi epoxy solder/ENIG joint. After 500 h at 85°C/85% RH storage condition, new IMCs were formed on the Ni3Sn4 layer in samples with both surface finishes. The results of board-level drop tests showed that the number of drops was higher for the ENIG than the ENEPIG surface finish. Solder joint fracture occurred along the interface between the solder and IMC layer for the ENIG surface finish. However, with the ENEPIG surface finish, the crack propagated between the IMCs.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Electronic Packaging and Soldering Technologies · 3D IC and TSV technologies · Advanced Welding Techniques Analysis

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (32)

Show source-provided references
1. P. Cox and G. Drys, Report No. Directive 2002/95/EC, Official Journal of the European Union, Brussels, January 2003.
2. P. Cox and G. Drys, Report No. Directive 2002/96/EC, Official Journal of the European Union, Brussels, January 2003.
3. Q. Zhao, J. Bi, A. Hu, M. Li, and D. Mao, in International Conference on Electronic Packaging Technology & High Density Packaging (2012), pp. 1226–1229. doi: 10.1109/ ICEPT-HDP.2012.6474827
4. W.M. Chen, S.K. Kang, and C.R. Kao, J. Alloys Compd. 520, 244 (2012).10.1016/j.jallcom.2012.01.032 ↗
5. J.W. Yoon, S.W. Kim, J.M. Koo, D.G. Kim, and S.B. Jung, J. Electron. Mater. 33, 1190 (2004).10.1007/s11664-004-0122-x ↗
6. L.C. Shiau, C.E. Ho, and C.R. Kao, Solder. Surf. Mt. Technol. 14, 25 (2002).10.1108/09540910210444692 ↗
7. C.Z. Liu and W. Zhang, J. Mater. Sci. 44, 149 (2009).10.1007/s10853-008-3118-8 ↗
8. J.W. Yoon, B.I. Noh, B.K. Kim, C.C. Shur, and S.B. Jung, J. Alloys Compd. 486, 142 (2009).10.1016/j.jallcom.2009.06.159 ↗
9. J. Wang, H.S. Liu, L.B. Liu, and Z.P. Jin, J. Electron. Mater. 35, 1842 (2006).10.1007/s11664-006-0166-1 ↗
10. J.W. Yoon, C.B. Lee, and S.B. Jung, Mater. Trans. 43, 1821 (2002).10.2320/matertrans.43.1821 ↗
11. P.L. Liu and J.K. Shang, J. Mater. Res. 16, 1651 (2001).10.1557/JMR.2001.0229 ↗
12. M.S. Suh, C.J. Park, and H.S. Kwon, Surf. Coat. Technol. 200, 3527 (2006).10.1016/j.surfcoat.2004.08.162 ↗
13. Q.K. Zhang and Z.F. Zhang, Mater. Sci. Eng. A. 528, 2686 (2011).10.1016/j.msea.2010.12.041 ↗
14. M.C. Liao, P.S. Huang, Y.H. Lin, C.Y. Huang, M.Y. Tsai, and T.C. Huang, in International Microsystems, Packaging, Assembly and Circuits Technology Conference (2014), pp. 397–400. doi: 10.1109/IMPACT.2014.704843610.1109/IMPACT.2014.7048436 ↗
15. B. Sandy, E. Briggs, R. Lasky, Indium Corporation Tech Paper, 1 (2011). http://www.indium.com/techlibrary/whitepapers/ advantages-of-bismuthbased-alloys-for-low-temperature-pbfree-soldering-and-rework. Accessed 27 June 2014
16. I. Cho, J.H. Ahn, J.W. Yoon, Y.E. Shin, and S.B. Jung, J. Mater. Sci. 23, 1515 (2012).
17. W.R. Myung, Y. Kim, and S.B. Jung, J. Alloys Compd. 615, S411 (2014).10.1016/j.jallcom.2014.01.078 ↗
18. J. Kim, W.R. Myung, and S.B. Jung, J. Microelectron. Packag. Soc. 21, 97 (2014).10.6117/kmeps.2014.21.4.097 ↗
19. L. Zhang, J.G. Han, C.W. He, and Y.H. Guo, J. Mater. Sci. 24, 172 (2013).
20. S.G. Desmarest, Mater. Sci. Tech-lond. 28, 257 (2012).10.1179/026708311X13135951528964 ↗
21. JEDEC Solid State Technology Association, JESD22-B104C “Mechanical Shock”, 2004
22. J.W. Yoon, C.B. Lee, and S.B. Jung, Mater. Trans. 43, 1821 (2002).10.2320/matertrans.43.1821 ↗
23. L.T. Chen and C.M. Chen, J. Mater. Res. 21, 962 (2006).10.1557/jmr.2006.0113 ↗
24. M.G. Cho, K.W. Paik, H.M. Lee, S.W. Booh, and T.G. Kim, J. Electron. Mater. 36, 35 (2006).
25. C.C. Chi, L.C. Tsao, C.W. Tsao, and T.H. Chuang, J. Mater. Eng. Perform. 17, 134 (2008).10.1007/s11665-007-9151-y ↗
26. Z. Mei, M. Kaufmann, A. Eslambolchi, and P. Johnson, in Electronic Components and Technology Conference (1998), pp. 952–961
27. A.M. Minor and J.W. Morris Jr., J. Electron. Mater. 29, 1170 (2000).10.1007/s11664-000-0009-4 ↗
28. S.S. Ha, J. Park, and S.B. Jung, Mater. Trans. 52, 1553 (2011).10.2320/matertrans.M2011107 ↗
29. C.M. Chen and S.W. Chen, J. Mater. Res. 18, 1293 (2003).10.1557/JMR.2003.0177 ↗
30. C. Fuchs, T. Schreck, and M. Kaloudis, J. Mater. Sci. 47, 4036 (2012).10.1007/s10853-012-6257-x ↗
31. D. Yao and J.K. Shang, Metall. Mater. Trans. A 26, 2677 (1995).10.1007/BF02669424 ↗
32. Y.C. Chan, P.L. Tu, C.W. Tang, K.C. Hung, and J.K.L. Lai, IEEE Trans. Adv. Packag. 24, 25 (2001).10.1109/6040.909621 ↗