Electrical Characteristics of a Ga-free T2SL Mid-wave Infrared nBn Detector Based on an InAs/AlAsSb/InAsSb Barrier
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OpenAlex topics: Advanced Semiconductor Detectors and Materials · Semiconductor Quantum Structures and Devices · Chalcogenide Semiconductor Thin Films
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References (21)
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1. Y.H. Kim, H.J. Lee, Y.C. Kim, J.H. Eom, J.O. Son, H.C. Jung, K.K. Kang, S.M. Ryu, T.H. Lee, J.G. Kim, A. Jang, S.H. Kim, J.H. Choi, and H. Jung, HOT InAs/InAsSb nBn Detector Development for SwaP Detector. Proc. SPIE 11741, 117410Y (2021).
2. M. Delmas, L. Höglund, R. Ivanov, S. Naureen, D. Ramos, D. Evans, S. Becanovic, S. Almqvist, D. Rihtnesberg, S. Fattala, S. Smuk, and E. Costard, HOT MWIR T2SL Detectors to Reduce System: Size, Weight, and Power. Proc. SPIE 11858, 11858Z (2021).
3. D.Z. Ting, S.B. Rafol, A. Khoshakhlagh, A. Soibel, S.A. Keo, A.M. Fisher, B.J. Pepper, C.J. Hill, and S.D. Gunapala, InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors. Micromachines 11, 958 (2020).10.3390/mi11110958 ↗
4. A. Rogalski, M. Kopytko, and P. Martyniuk, Antimonide-based infrared detectors a new perspective (SPIE Press, 2018).10.1117/3.2278814 ↗
5. B.V. Olson, E.A. Shaner, J.K. Kim, J.F. Klem, S.D. Hawkinsahru, L.M. Murray, J.P. Prineas, M.E. Flatte, and T.F. Boggess, Time-Resolved Optical Measurements of Minority Carrier Recombination in a Mid-wave Infrared InAsSb alloy and InAs/InAsSb Superlattice. Appl. Phys. Lett. 101, 092109 (2012).10.1063/1.4749842 ↗
6. B.V. Olson, E.A. Kadlec, J.K. Kim, J.F. Klem, S.D. Hawkins, and E.A. Shaner, Intensity- and Temperature-Dependent Carrier Recombination in InAs/InAs1−xSbx Type-II Superlattices. Phys. Rev. Appl. 3, 044010 (2015).10.1103/PhysRevApplied.3.044010 ↗
7. M. Razeghi, A. Dehzangi, and J. Li, Multi-band SWIR-MWIR-LWIR Type-II Superlattice Based Infrared Photodetector. Results in Optics 2, 100054 (2021).10.1016/j.rio.2021.100054 ↗
8. H.J. Lee, A. Jang, Y.H. Kim, H. Jung, B. Pavlo, S. Kim, M. Kim, and J. Nah, Comparative Advantages of a Type-II Superlattice Barrier Over an AlGaSb Barrier for Enhanced Performance of InAs/GaSb LWIR nBn Photodetectors. Opt. Lett. 46, 3877 (2021).10.1364/OL.435479 ↗
9. A. Rogalski, P. Martyniuk, M. Kopytko, P. Madejczyk, and S. Krishna, InAsSb-Based Infrared Photodetectors: Thirty Years Later On. Sensors 20, 7047 (2020).10.3390/s20247047 ↗
10. W.E. Tennant, D. Lee, M. Zandian, E. Piquette, and M. Carmody, MBE HgCdTe Technology: A Very General Solution to IR Detection, Described by ‘‘Rule 07’’, a Very Convenient Heuristic, J. Electron. Mater., 37 (2008).10.1007/s11664-008-0426-3 ↗
11. J.L. Johnson, L.A. Samoska, A.C. Gossard, J.L. Merz, M.D. Jack, G.R. Chapman, B.A. Baumgratz, K. Kosai, and S.M. Johnson, Electrical and Optical Properties of Infrared Photodiodes Using the InAs/Ga1−xInxSb Superlattice in Heterojunctions with GaSb. J. Appl. Phys. 80, 1116 (1996).10.1063/1.362849 ↗
12. G.R. Savich, D.E. Sidor, X. Du, C.P. Morath, V.M. Cowan, and G.W. Wicks, Diffusion Current Characteristics of Defect-Limited nBn Mid-wave Infrared Detectors. Appl. Phys. Lett. 106, 173505 (2015).10.1063/1.4919450 ↗
13. P. Martyniuk, M. Kopytko, and A. Rogalski, Barrier Infrared Detectors. Opto-Electron Rev 22, 127 (2014).
14. H.J. Lee, S.Y. Ko, Y.H. Kim, and J. Nah, Surface Leakage Current Reduction of InAsSb nBn MWIR HOT Detector via Hydrogen Peroxide Treatment, Infrared Phys Technol., 112 (2021).10.1016/j.infrared.2020.103597 ↗
15. J. Shen, S.Y. Ren, and J.D. Dow, Deep Levels in Type-II InAs/GaSb Superlattices. Phys. Rev. B 46, 6938 (1992).10.1103/PhysRevB.46.6938 ↗
16. M. Delmas, B.L. Liang, and D.L. Huffaker, A Comprehensive Set of Simulation Tools To Model and Design High-Performance Type-II InAs/GaSb Superlattice Infrared Detectors. Proc. SPIE 10926, 109260G (2019).
17. I. Vurgaftman, J.R. Meyer, and L.R. Ram-Mohan, Band Parameters for III–V Compound Semiconductors and their Alloys. J. Appl. Phys. 89, 5815 (2001).10.1063/1.1368156 ↗
18. P.T. Webster, N.A. Riordan, S. Liu, E.H. Steenbergen, R.A. Synowicki, Y.-H. Zhang, and S.R. Johnson, Measurement of InAsSb Bandgap Energy and InAs/InAsSb Band Edge Positions Using Spectroscopic Ellipsometry and Photoluminescence Spectroscopy. J. Appl. Phys. 118, 245706 (2015).10.1063/1.4939293 ↗
19. T. Manyk, K. Michalczewski, K. Murawski, K. Grodecki, J. Rutkowski, and P. Martyniuk, Electronic Band Structure of InAs/InAsSb Type-II Superlattice for HOT LWIR Detectors. Results Phys. 11, 1119 (2018).10.1016/j.rinp.2018.11.030 ↗
20. D.Z. Ting, S.B. Rafol, S.A. Keo, J. Nguyen, A. Khoshakhlagh, A. Soibel, L. Höglund, A.M. Fisher, E.M. Luong, J.M. Mumolo, and J.K. Liu, InAs/InAsSb Type-II Superlattice Mid-Wavelength Infrared Focal Plane Array With Significantly Higher Operating Temperature Than InSb. IEEE Photon. J. 10, 6 (2018).10.1109/JPHOT.2018.2877632 ↗
21. D.Z. Ting, A. Soibel, A. Khoshakhlagh, S.B. Rafol, S.A. Keo, L. Höglund, A.M. Fisher, E.M. Luong, and S.D. Gunapala, Mid-wavelength High Operating Temperature Barrier Infrared Detector and Focal Plane Array. Appl. Phys. Lett. 113, 021101 (2018).10.1063/1.5033338 ↗