Epitaxially regrown GaAs/AlGaAs laser mesas with semi-insulating GaInP:Fe and GaAs:Fe
Source abstract
Abstract
Selective regrowth of semi-insulating iron-doped Ga0.51In0.49P (SI-GaInP:Fe) and SI-GaAs:Fe around GaAs/AlGaAs mesas by hydride vapor phase epitaxy (HVPE) has been achieved. A HCl based in-situ cleaning procedure has been used to remove aluminum oxide from the etched walls of the mesas. Regrowth conducted without proper cleaning results in an irregular interface with voids. Regrowth morphology aspects are also presented. Our cleaning and regrowth methods have been used for fabricating GaAs/AlGaAs buried heterostructure in-plane lasers and vertical-cavity surface-emitting lasers.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor Lasers and Optical Devices · Photonic and Optical Devices · Semiconductor Quantum Structures and Devices
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References (14)
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