journal article·1978-03

Effects of contact metals on minority carrier diffusion lengths in GaAs

D. L. Partin, A. G. Milnes, L. F. Vassamillet

Journal of Electronic Materials· Volume 7· Issue 2
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OpenAlex topics: Semiconductor materials and interfaces · Silicon and Solar Cell Technologies · Semiconductor materials and devices

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References (86)

Show source-provided references
1. A. M. Sekela, D. L. Feucht and A. G. Milnes, IEEE Trans. Electron Devices,ED-24, 373 (1977).10.1109/T-ED.1977.18743 ↗
2. Zh. I. Alferov, V. M. Andreev, N. V. Klepikova, V. I. Kolyshkin, S. G. Konnikov, V. R. Larionov, E. L. Portnoi, and G. N. Shelovanova, Sov. Phys. Semi.,8 826 (1975).
3. W. Harth, J. Heinen, and W. Huber, Elec. Lett.,11, 23 (1975).10.1049/el:19750017 ↗
4. R. L. Bell,Negative Electron Affinity Devices, Clarendon Press, Oxford, (1973).
5. C. J. Nuese, J. J. Gannon, R. H. Dean, H. F. Gossenberger and R. E. Enstrom, Solid State Elec.,15, 81 (1972).10.1016/0038-1101(72)90069-X ↗
6. A. M. Sekela, D. L. Feucht, and A. G. Milnes, 1974 Symposium on GaAs and Related Materials, Aachen, Germany, Inst. of Physics and Physical Soc. London, p. 245.
7. H. C. Casey, B. I. Miller, and E. Pinkas, J. Appl. Phys.,44, 1281 (1973).10.1063/1.1662340 ↗
8. C. J. Hwang, J. Appl. Phys.,40, 3731 (1969).10.1063/1.1658263 ↗
9. L. W. Aukerman, M. F. Millea, and M. McColl, J. Appl. Phys.,38, 685 (1967).10.1063/1.1709396 ↗
10. G. A. Ashley, W. Nijman, and H’t. Lam, J. Appl, Phys.,45, 3033 (1974).10.1063/1.1663720 ↗
11. M. Ettenberg, H. Kressel, and S. L. Gilbert, J. Appl. Phys. Lett.,44, 827 (1973).
12. M. Ettenberg, G. H. Olsen, and C. J. Nuese, Appl. Phys. Lett.,29, 141 (1976).10.1063/1.89027 ↗
13. G. A. Acket, W. Nijman, and H’t. Lam, J. Appl. Phys.,45, 3033 (1974).10.1063/1.1663720 ↗
14. T. S. Rao-Sahib and D. B. Wittry, J. Appl. Phys.,40, 3745 (1969).10.1063/1.1658265 ↗
15. J. Vilms and W. E. Spicer, J. Appl, Phys.,36, 2815 (1965).10.1063/1.1714587 ↗
16. M. Ettenberg and C. J. Nuese, J. Appl. Phys.,46, 3500 (1975).10.1063/1.322076 ↗
17. M. S. Abrahams and C. J. Buiocchi, J. Appl. Phys.,36, 2855 (1965).10.1063/1.1714594 ↗
18. S. Mayburg, Sol. St. Elec.,2, 195 (1961).10.1016/0038-1101(61)90038-7 ↗
19. R. D. Ryan and J. E. Eberhardt, Sol. St. Elec.,15, 865 (1972).10.1016/0038-1101(72)90022-6 ↗
20. W. Rosenthal, Sol. St. Comm.,13, 1215 (1973).10.1016/0038-1098(73)90567-X ↗
21. L. Jastrzebski, J. Lagowski, and H. C. Gatos, Appl, Phys. Lett.,27, 537 (1975).10.1063/1.88276 ↗
22. D. F. Kyser and D. B. Wittry, Proc. IEEE,55, 733 (1967).10.1109/PROC.1967.5675 ↗
23. R. U. Martinelli and C. C. Wang, J. Appl. Phys.,44, 3350 (1973).10.1063/1.1662759 ↗
24. H. M. Macksey,1976 GaAs and Related Materials Con- ference. St. Louis, U.S.A., nst. of Physics and Physical Soc., London, p. 254.
25. K. Heime, U. Konig, E. Kohn and A. Wortmann, Sol. St. Elec.,17, 835 (1974).10.1016/0038-1101(74)90032-X ↗
26. W. D. Edwards, W. A. Hartman and A. B. Torrens, Sol. St. Elec.,15, 387 (1972).10.1016/0038-1101(72)90109-8 ↗
27. T. Sebestyen, H. Hartnagle, and L. H. Herron, Elec. Lett.,10, 373 (1974).10.1049/el:19740295 ↗
28. K. L. Klohn and L. Wandinger, J. Electrochem. Soc.,116, 508 (1969).10.1149/1.2411927 ↗
29. R. H. Cox and H. Strack, Sol. St. Elec.,10, 1213 (1967).10.1016/0038-1101(67)90063-9 ↗
30. H. J. Gopen and A. Y. C. Yu, Sol. St. Elec.,14, 515 (1971).10.1016/0038-1101(71)90062-1 ↗
31. M. Ogawa, D. Shinoda, N. Kawamura, T. Nozaki and S. Asanabe,1970 Symposium on GaAs and Related Materials, Aachen, Germany, Inst. of Physics and Physical Soc., London, p. 268.
32. N. I. Suchkova, D. G. Andrianov, E. M. Omelyanovskii, E. P. Rashevskaya, and N. N. Solovev, Sov. Phys.Semicond.,9, 469 (1975).
33. V. K. Bazhenov, E. P. Rashevskaya, M. N. Solovev, and M. G. Foigel, Sov. Phys. Semicond.,7, 1067 (1974).
34. A. A. Gutkin, D. N. Nasledov, and F. E. Faradzhev, Sov. Phys. Semicond.,8, 298 (1974).
35. R. K. Willardson and W. P. Allred,1966 Symposium on Gallium Arsenide, Reading, U.K., Inst. of Physics and Physical Soc., London, p. 35.
36. D. V. Lang, R. A. Logan, and L. C. Kimerling, Phys. Rev. B,15, 4874 (1977).10.1103/PhysRevB.15.4874 ↗
37. S. Metz and W. Fritz, 976 GaAs and Related Materials Conference, Edinburgh, U.K., Inst. of Physics and Physical Soc., London, p. 66.
38. D. T. J. Hurle,1976 GaAs and Related Materials Con- ference, Edinburgh, U.K., Inst. of Physics and Physical Soc., London, p. 66.
39. C. M. Wolfe and G. E. Stillman, Appl. Phys. Lett.,27, 565 (1976).
40. C. J. Hwang, J. Appl. Phys.,40, 4584 (1969).10.1063/1.1657236 ↗
41. C. T. Sah, L. Forbes, L. L. Rosier and A. F. Tasch, Jr., Sol. St. Elec.,13, 759 (1970).10.1016/0038-1101(70)90064-X ↗
42. S. Y. Chiang and G. L. Pearson, J. Appl. Phys.,46, 2986 (1975).10.1063/1.321985 ↗
43. F. A. Kroger, Ann. Rev. Mater. Sci.,7, 449 (1977).10.1146/annurev.ms.07.080177.002313 ↗
44. V. I. Sokolov and F. S. Shishiyanu, Sov. Phys. Sol. St.,6 265 (1964).
45. B. I. Boltaks and F. S. Shishiyanu, Sov. Phys. Sol. St.,5, 1680 (1964).
46. F. S. Shishiyanu and B. I. Boltaks, Sov. Phys. Sol. St.,8, 1053 (1966).
47. M. Blatte, W. Schairer and F. Willmann, Sol. St. Comm.,8, 1265 (1970).10.1016/0038-1098(70)90617-4 ↗
48. B. I. Boltaks and F. S. Shishiyanu, Sov. Phys. Sol. St.,7, 822 (1965).
49. A. G. Milnes,Deep Impurities in Semiconductors, Wiley, New York (1973).
50. A. Bahraman and W. G. Oldham, J. Appl. Phys.,43, 2383 (1972).10.1063/1.1661507 ↗
51. F. Hasegawa, J. Appl. Phys.,45, 1944 (1974).10.1063/1.1663526 ↗
52. E. W. Williams and D. M. Blacknall, Trans. AIME,239, 387 (1967).
53. C. H. Ting and G. L. Pearson, J. Appl. Phys.,42, 2247 (1971).10.1063/1.1660531 ↗
54. V. M. Glazov and A. I. Kiselev, Sov. Phys. Semicond.,9, 1436 (1976).
55. J. L. Su, Y. Nishi, and J. L. Moll, Sol. St. Elec.,14, 262 (1971).10.1016/0038-1101(71)90042-6 ↗
56. D. H. Newman, R. F. Godfrey, A. R. Goodwin and D. F. Lovelace, Appl. Phys. Lett.,29, 353 (1976).10.1063/1.89076 ↗
57. H. C. Casey and M. B. Panish, Trans. Met. Soc. AIME,242, 406 (1968).
58. Y. Kushiro, T. Seimiya, O. Sinbori, and T. Kobayashi, J. Appl. Phys.,48, 1636 (1977).10.1063/1.323846 ↗
59. H. Matino and M. Tokunaga, J. Electrochem. Soc.,116, 710(1969).10.1149/1.2412031 ↗
60. G. A. Aleksandrova, G. G. Kolesnikova, A. P. Korovin, N. V. Korotkova, G. F. Lymar, and D. P. Sarnatskii, Sov. Phys. Semic,10, 1162 (1976).
61. D. V. Lang and R. A. Logan, J. Electronic Materials,4, 1053 (1975).10.1007/BF02660189 ↗
62. A. A. Lebedev, F. A. Akhmedov and M. M. Akhmedova, Sov. Phys. Semi.,10, 1028 (1976).
63. H. Strack,1966 Symposium on Gallium Arsenide, Reading, U.K., Inst. of Physics and Physical Soc., London, p. 206.
64. S. S. Khludkov, G. L. Prikhodko, and T. A. Karelina, Inorganic Materials,8, 914 (1972).
65. S. P. Murarka, Sol. St. Elec.,17, 985 (1974).10.1016/0038-1101(74)90052-5 ↗
66. A. K. Sinha, T. E. Smith, M. H. Read, and J. M. Poate, Sol. St. Elec.,19, 489 (1976).10.1016/0038-1101(76)90012-5 ↗
67. J. M. Woodall and H. J. Hovel, Appl. Phys. Lett.,30, 492 (1977).10.1063/1.89461 ↗
68. V. L. Rideout, Sol. St. Elec.,18, 541 (1975).10.1016/0038-1101(75)90031-3 ↗
69. A. A. Gavrilov, G. A. Kachurin, L. N. Safronov, and L. S. Smirnov, Sov. Phys. Semi.,10, 847 (1977).
70. G. B. Stringfellow and H. T. Hall, Jr., J. Electrochem. Soc.,123, 916 (1976).10.1149/1.2132967 ↗
71. A. Y. Cho and I. Hayashi, Sol. St. Elec.,14, 125 (1971).10.1016/0038-1101(71)90087-6 ↗
72. A. Rothwarf and K. W. Boer, Prog. in Solid State Chem.,10, 71 (1975).10.1016/0079-6786(75)90007-2 ↗
73. R. A. Smith, Semiconductors, Cambridge University Press, London, 1968.
74. W. D. Johnston, Jr. and W. M. Callahan, Appl. Phys. Lett.,28, 150 (1976).10.1063/1.88671 ↗
75. A. V. Vasilev, G. K. Ippolitova, E. M. Omelyanovskii, and A. I. Ryskin, Sov. Phys. Semi.,10, 341 (1976).
76. A. K. Sinha, T. E. Smith, M. H. Read, and J. M. Poate, Sol. St. Elec.,19, 489 (1976).10.1016/0038-1101(76)90012-5 ↗
77. M. F. Bekmuratov and V. I. Murygin, Sov, Phys. Semi.,7, 55 (1973).
78. B. V. Kornilov, L. V. Marchukov, and V. K. Ergakov, Sov. Phys. Semi.,8, 141 (1974).
79. I. Shiota, K. Motoya, T. Ohmi, N. Miyamoto, and J. Nishizawa, J. Electrochem. Soc.,124, 155 (1977).10.1149/1.2133232 ↗
80. C. Hilsum and A. C. Rose-Innes,Semiconductor III-V Compounds, Pergamon Press, New York (1961).
81. D. V. Lang and R. A, Logan, J. Appl. Phys.,47, 1533 (1976).10.1063/1.322820 ↗
82. H. J. Hovel and J. M. Woodall, Appl. Phys. Lett.,27, 447 (1975).10.1063/1.88512 ↗
83. A. Mitonneau, G. M. Martin, and A. Mircea,1976 GaAs and Related Materials Symposium, Edinburgh, U.K., Inst. of Physics, London, p. 73.
84. D. V. Lang and R. A. Logan, J. Electron. Mater.,4, 1053 (1975).10.1007/BF02660189 ↗
85. Dr. Lang does not believe that the level he observed is due to Ni (private communication).
86. W. Shockley and W. T. Read, Jr., Phys. Rev.,87, 835 (1952).10.1103/PhysRev.87.835 ↗