High purity LPE InP
Bibliographic record
Abstract
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Research context
OpenAlex topics: Semiconductor materials and devices · Semiconductor Quantum Structures and Devices · Photonic and Optical Devices
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References (8)
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1. G. G. Baumann, K. W. Benz, and M.H. Pilkuln, J. Electrochem. Soc.,123, 1232 (1976).10.1149/1.2133041 ↗
2. H.G.B. Hicks and P.D. Greene, Proc. 3rd Int. Symp. on Gallium Arsenide: Inst. Phys. Conf. Ser., No. 9, 92 (1970).
3. D.L. Rode, Phys. Rev. B3, 3287 (1971).10.1103/PhysRevB.3.3287 ↗
4. V.L. Wrick et al., Proc. 6th Int. Symp. on Gallium Arsenide: Inst. Phys. Conf. Ser. No. 33a, 35 (1976).
5. O. Kubaschewski et al., 1967 Metallurgical Thermochemistry 4th Edition (Oxford: Pergamon Press).
6. C.D. Thurmond and M. Kowalchik, Bell Syst. Tech. J.,39, 169 (1960).10.1002/j.1538-7305.1960.tb03927.x ↗
7. P. Dean, RSRE, Private Communication.
8. InP supplied by R. Henry and E. Swiggard of N.R.L. and G. Antypas of Varian Assoc.