journal article·1983-09

High- Purity inp grown by hydride vpe technique with impurity gettering by indium source and oxygen

Akira Usui, Hisatsune Watanabe

Journal of Electronic Materials· Volume 12· Issue 5
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Abstract

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Research context

OpenAlex topics: Semiconductor Quantum Structures and Devices · Silicon and Solar Cell Technologies · solar cell performance optimization

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References (10)

Show source-provided references
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4. D.W. Shaw, J. Cryst. Growth8, 117 (1971).10.1016/0022-0248(71)90032-7 ↗
5. T. Mizutani, M. Yoshida, A. Usui, H. Watanabe, T. Yuasa and I. Hayashi, Japan. J. Appl. Phys.19, L113 (1980).10.1143/JJAP.19.L113 ↗
6. A. Usui, Y. Matsumoto, T. Inoshita, T. Mizutani and H. Watanabe, Proc. 11th Intern. Symp. on Gallium Arsenide and Related Compounds, 1981, p.137.
7. M. C. Hales and J. R. Knight, J. Cryst. Growth46, 582 (1978).10.1016/0022-0248(79)90049-6 ↗
8. D. L. Rode, Phys. Rev.3, 3287 (1971).10.1103/PhysRevB.3.3287 ↗
9. J. V. DiLorenzo, J. Cryst. Growth 17, 189 (1972).10.1016/0022-0248(72)90247-3 ↗
10. S. H. Groves and M. C. Plonko, Proc. 7th Intern. Symp. on Gallium Arsenide and Related Compounds, 1978, p.71.