Optical absorption studies of Si implanted SiO2
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (30)
Show source-provided references
1. E. W. J. Mitchell and E. G. S. Paige, Phil. Mag.1, 1085 (1956).10.1080/14786435608238193 ↗
2. R. A. Weeks, C. M. Nelson, J. Am. Ceram. Soc.43, 399 (1960).10.1111/j.1151-2916.1960.tb13682.x ↗
3. C. M. Nelson and J. H. Crowford, Jr., J. Phys. Chem. Solids13, 296 (1960).10.1016/0022-3697(60)90014-7 ↗
4. C. M. Nelson, R. A. Weeks, J. Am. Ceram. Soc.43, 396 (1960).10.1111/j.1151-2916.1960.tb13681.x ↗
5. D. L. Griscom in ‘Physics of SiO2 and Its Interfaces’, Ed. S. T. Pantelides, Pergamon Press (1978) p. 232.10.1016/B978-0-08-023049-8.50045-2 ↗
6. G. W. Arnold, IEEE Trans. Nuc. Sci.NS-20, 220 (1973).10.1109/TNS.1973.4327397 ↗
7. G. W. Arnold, in ‘Physics of SiO2 and Its Interfaces’, Ed. S. T. Pantelides, Pergamon Press (1978) p. 278.10.1016/B978-0-08-023049-8.50051-8 ↗
8. T. W. Hickmott, J. Vac. Sci. Technol.9, 311 (1972).10.1116/1.1316592 ↗
9. T. W. Hickmott, J. Appl. Phys.43, 2339 (1972).10.1063/1.1661501 ↗
10. G. W. Arnold and W. D. Compton, Phys. Rev.116, 802 (1959).10.1103/PhysRev.116.802 ↗
11. W. D. Compton and G. W. Arnold, Disc. Faraday Soc.31, 130 (1961).10.1039/df9613100130 ↗
12. G. H. Sigel Jr., E. J. Friebele, R. J. Ginter and D. L. Griscom, IEEE Trans. Nuc. Sci.NS-21, 56 (1974).10.1109/TNS.1974.6498906 ↗
13. T. W. Hickmott, J. Appl. Phys.42, 2543 (1971).10.1063/1.1660577 ↗
14. H. R. Philipp, J. Phys. Chem. Solids32, 1935 (1971).10.1016/S0022-3697(71)80159-2 ↗
15. E. Holzenkampfer, F. W. Richter, J. Stuke and U. Voget-Grote, J. Non-Cryst. Solids32, 327 (1979).10.1016/0022-3093(79)90080-2 ↗
16. T. W. Hickmott, J. Appl. Phys.45, 1050 (1974).10.1063/1.1663367 ↗
17. C. Andeen, D. Schuele, J. Appl. Phys.45, 3 1071 (1974).10.1063/1.1663369 ↗
18. E. P. O’Reilly and J. Robertson, Phys. Rev. B27, 6 (1983).10.1103/PhysRevB.27.3780 ↗
19. A. Kalnitsky, Ph.D. Thesis, Carleton University, Ottawa April (1989).
20. E. H. Poindexter and P. J. Caplan, J. Vac. Sci. Technol. A6, 1352 (1988).10.1116/1.575701 ↗
21. G. N. Greaves in ‘Physics of SiO2 and Its Interfaces’, Ed. S. T. Pantelides, Pergamon Press (1978) p. 268.10.1016/B978-0-08-023049-8.50049-X ↗
22. A. Kalnitsky, M. I. H. King, A. R. Boothroyd, J. P. Ellul and R. A. Hadaway, 45th Device Res. Conf., Santa Barbara, CA, 1987.
23. G. Hetherington, K. H. Jack, J. Phys. Chem. Glasses 5, 447 (1964).
24. A. S. Grove ‘Phys. and Techn. Semicond. Devices’, J. Wiley and Sons, N.Y., 1967, p. 48.
25. B. E. Deal and A. S. Grove, J. Appl. Phys.36, 3770 (1965).10.1063/1.1713945 ↗
26. F. J. Norton, Nature171, 701 (1961).10.1038/191701a0 ↗
27. E. P. EerNisse, J. Appl. Phys.45, 167 (1974).10.1063/1.1662952 ↗
28. R. H. Doremus, Thin Solid Films122, 191 (1984).10.1016/0040-6090(84)90046-4 ↗
29. H. M. Presby, W. I. Brown, Appl. Phys. Lett.24, 511 (1974).10.1063/1.1655033 ↗
30. E. P. EerNisse and G. F. Derbenwick, IEEE Trans. Nuc. Sci.NS-23, 1534 (1976).10.1109/TNS.1976.4328534 ↗