journal article·1995-07

Low temperature heteroepitaxial growth of Si1−xGexon-Si by photo-enhanced ultra high vacuum chemical vapor deposition using Si2H6 and Ge2H6

C. Li, S. John, S. Banerjee

Journal of Electronic Materials· Volume 24· Issue 7
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Abstract

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Semiconductor materials and devices · Silicon Nanostructures and Photoluminescence

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References (34)

Show source-provided references
1. H. Temkin, T. Pearsall, J. Bean, R. Logan and S. Luryi,Appl. Phys. Lett. 48, 963 (1986).10.1063/1.96624 ↗
2. D. Greve, R. Misra, T. Schlesinger, G. McLaughlin and M. Capano,Thin Solid Film 222, 46 (1992).10.1016/0040-6090(92)90036-B ↗
3. L. Vescan, K. Schmidt, C. Dieker, H. Tang, T. Vescan, and H. Luth,Thin Solid Film 222, 5 (1992).10.1016/0040-6090(92)90026-8 ↗
4. R. People, J. Bean and D. Lang,J. Vac. Sci. Tech. A3, 846 (1985).10.1116/1.573328 ↗
5. H. Hirayama, M. Hiroi, K. Koyama and T. Tatsumi,J. Cryst. Growth 105, 46 (1990).10.1016/0022-0248(90)90337-K ↗
6. J. Bean, L. Feldman, A. Fiory, S. Nakahara and I. Robinson,J. Vac. Sci. Tech. A2, 436 (1984).10.1116/1.572361 ↗
7. B. Meyerson, K. Uram and F. LeGoues,Appl. Phys. Lett. 53 (25) 2555 (1988).10.1063/1.100206 ↗
8. B. Anthony, L. Breaux, T. Hsu, S. Banerjee and Al Tasch,J. Vac. Sci. Tech. B 7 (4), 621 (1989).10.1116/1.584805 ↗
9. A. Yamada, M. Konagia and K. Takahashi,Jpn. J. Appl. Phys. 24 (12), 1586 (1985).10.1143/JJAP.24.1586 ↗
10. S. Lian, B. Fowler, S. Krishnan, L. Jung, C. Li and S. Banerjee,J. Electrochem. Soc. 139, 2273 (1992).10.1149/1.2221214 ↗
11. S. Gates and S. Kulkarni,Appl. Phys. Lett. 60 (1), 53 (1992).10.1063/1.107371 ↗
12. D. Eres, D. Lowndes, J. Tischler, J. Sharp, D. Geohegan and S. Pennycook,Mater. Res. Soc. Symp. Proc. 131, 517 (1989).10.1557/PROC-131-517 ↗
13. T. Gow, D. Coronell and R. Masel,J. Mater. Res. 4 (3), 634 (1989).10.1557/JMR.1989.0634 ↗
14. S. Gates and C. Chiang,Chem. Phy. Lett. 184 (5,6), 448 (1991).10.1016/0009-2614(91)80017-R ↗
15. M. Kumagawa, H. Sunami, T. Terasaki and J. Nishizawa,Jpn. J. Appl. Phys. 7, 1332 (1968).10.1143/JJAP.7.1332 ↗
16. A. Ishitani, M. Kanamori and H. Tsuya,J. Appl. Phys. 57 (8) 15 (1985).10.1063/1.335238 ↗
17. Y. Jia, A. Yamada, M. Konagai and K. Takahashi,Jpn. J. of Appl. Phys. 30 (5), 839 (1991).
18. H. Takei, T. Tanaka, W.Y. Kim, M. Konagai and K. Takahashi,J. Appl. Phys. 58 (9) (1985).10.1063/1.335724 ↗
19. D. Graf, M. Grundner, R. Schulz and L. Muhlhoff,J. Appl. Phys. 68, 5155 (1990).10.1063/1.347056 ↗
20. S. Lian, B. Fowler, S. Krishnan, L. Jung, C. Li, D. Samara, I. Manna and S. Banerjee,J. Vac. Sci. Tech. A 11 (6), 2914, (1993).10.1116/1.578668 ↗
21. G. Chang, T. Carns, S. Rheeand and K. Wang,J. Electrochem. Soc. 138(1), 202 (1991).10.1149/1.2085539 ↗
22. Hirayama, T. Tatsui and N. Aizaki,Appl. Phy. Lett. 52,2242, (1988).10.1063/1.99654 ↗
23. P. Garone, J. Sturm and P. Achwartz,Appl. Phys. Lett. 56 (13), 1275 (1990).10.1063/1.102535 ↗
24. M. D’Evelyn, Y. Yang and L. Sutcu,J. Chem. Phys. 96 (1), 852 (1992).10.1063/1.462417 ↗
25. S. Gates and S. Kulkarni,Appl. Phys. Lett. 58 (25), 2963 (1991).10.1063/1.104709 ↗
26. S. Gates and C. Chiang,Chem. Phys. Lett. 184 (5,6), 448 (1991).10.1016/0009-2614(91)80017-R ↗
27. M. Dillon, D. Spence, L. Boesten and H. Tanaka,J. Chem. Phys. 88 (7), 4320 (1988).10.1063/1.453791 ↗
28. B. Fowler, S. Lian, S. Krishnan, L. Jung, C. Li, D. Samara, I. Manna and S. Banerjee,J. Appl. Phys. 72, 1137 (1992).10.1063/1.351791 ↗
29. T. Gow, D. Coronell and R. Massel,J. Mater. Res. 4 (3), 634 (1989).10.1557/JMR.1989.0634 ↗
30. H. Burke, I. Herman, V. Tavitian and J. Eden,Appl. Phys. Lett. 55 (3), 253 (1989).10.1063/1.102384 ↗
31. S. Jang and R. Reif,Appl. Phy. Lett. 60 (6), 707 (1992).10.1063/1.106544 ↗
32. B. Ruscic, M. Schwarz and J. Berkowitz,J. Chem. Phys. 92 (3), 1865 (1990).10.1063/1.458587 ↗
33. J. Doyle, D. Doughty and A. Gallagher,J. Appl. Phys. 69 (8), 4169 (1991).10.1063/1.348384 ↗
34. S. Jang and R. Reif,Appl. Phys. Lett. 59 (24), 3162 (1991).10.1063/1.106399 ↗