Effect of Ar+ Radiofrequency Plasma Treatment Conditions on the Interfacial Adhesion Energy Between Atomic-Layer-Deposited Al2O3 and Cu Thin Films in Embedded Capacitors
Source abstract
Abstract
The effects of Ar+ radiofrequency (RF) plasma pretreatment conditions on the interfacial adhesion energy of a Cu/Cr/Al2O3 system were investigated for thin-film capacitors in embedded printed circuit board applications. The interfacial adhesion energy was evaluated from 90 deg peel tests by calculating the plastic deformation energy of peeled metal films from the energy balance relationship during the steady-state peeling process. The interfacial adhesion energy was fivefold higher after RF plasma pretreatment of the surface of 50-nm-thick Al2O3 prepared by atomic layer deposition. Atomic force microscopy, Auger electron spectroscopy, and x-ray photoemission spectroscopy results clearly reveal that this increase can be attributed to both mechanical interlocking and chemical bonding effects.
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OpenAlex topics: Copper Interconnects and Reliability · Electronic Packaging and Soldering Technologies · 3D IC and TSV technologies
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