Compositional and Strain Characterization of Ion-Beam-Synthesized Ge x Si1−x Thin Films
Source abstract
Abstract
A thin film of Ge-rich Ge x Si1−x on a (100) Si substrate was synthesized by ion implantation followed by thermal oxidation. Proper oxidation conditions were maintained to produce a film with Ge atomic content of more than 95%, confirmed by both high-resolution Rutherford backscattering spectrometry (RBS) and Raman spectroscopy. The strain state of the Ge-rich thin film is a function of its thickness, as determined by the implantation fluence. The use of Raman spectroscopy to monitor the composition and strain state of the Ge thin film formed is discussed.
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Research context
OpenAlex topics: Semiconductor materials and devices · Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence
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References (15)
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