Characterization of Crystalline Carbon Nitride Films Deposited on Si and Si3N4/Si Substrate by RF Magnetron Sputtering System with DC Bias

Crystalline carbon nitride films were deposited on Si and Si3N4/Si substrate by reactive RF magnetron sputtering system with chamber heating and DC bias. The deposited films showed α -C3N4, β -C3N4 and lonsdaleite phase by XRD, XPS and FTIR. The crystalline morphology was found to gave a hexagonal structure, which has theoretical unit cell of carbon nitride observed in SEM photographs. When nitrogen gas ratio is 70%, RF power is 300 W and DC bias is –80 V, the growth rate of carbon nitride film on Si3N4 substrate is 2.2 μm/hr, which is a relatively high growth rate compared with those in previously reported papers. The deposited films have thermally stable properties in the range of 650_∘C to 1,400_∘C.