Energy harvesting MEMS device based on thin film piezoelectric cantilevers
Source abstract
Abstract
A thin film lead zirconate titanate Pb(Zr,Ti)O3 (PZT), energy harvesting MEMS device is developed to enable self-supportive sensors for in-service integrity monitoring of large social and environmental infrastructures at remote locations. It is designed to resonate at specific frequencies of an external vibrational energy source, thereby creating electrical energy via the piezoelectric effect. Our cantilever device has a PZT/SiNx bimorph structure with a proof mass added to the end. The Pt/Ti top electrode is patterned into an interdigitated shape on top of the sol-gel-spin coated PZT thin film in order to employ the d 33 mode. The base-shaking experiment at the first resonant frequency of the cantilever (170 × 260 μm) generates 1 μW of continuous electrical power to a 5.2 MΩ resistive load at 2.4 V DC. The effect of proof mass, beam shape and damping on the power generating performance are modeled to provide a design guideline for maximum power harvesting from environmentally available low frequency vibrations. A spiral cantilever is designed to achieve compactness, low resonant frequency and minimum damping coefficient, simultaneously.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Innovative Energy Harvesting Technologies · Advanced Sensor and Energy Harvesting Materials · Smart Materials for Construction
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (17)
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1. S.R.T. Kumara, S.G. Kim, X. Zhang, and S. Bukkapatnam, NSF DMII Grantees' Conference (Scottsdale, 2005).
2. S. Roundy, P.K. Wright, and J. Rabaey, Computer Communications, 26, 1131–1144 (2003).10.1016/S0140-3664(02)00248-7 ↗
3. C.W. Wong, Y. Jeon, G. Barbastathis, and S.G. Kim, Technical Digest of the 2002 Solid-State Sensor and Actuator Workshop (Hilton Head Island, SC, June 2–6, 2002), pp. 342–345.10.31438/trf.hh2002.85 ↗
4. K. Hwang, M. Koo, and S.G. Kim, Proceedings of SPIE (Santa Clara, CA, USA, Sep. 1998), p. 171–180.
5. J.P. Glynne, S.P. Beeby, and N.M. White, IEE proceedings of Science, Measurement and Technology, 148, 69–72 (2001).
6. J. Kymissis, C. Kendall, J. Paradiso, and N. Gershenfeld, Proceedings of the Second IEEE International Conference on Wearable Computing ISWC, (Pittsburgh, PA, USA, Oct. 19–20, 1998).
7. R. Sood, Y. Jeon, J.-H. Jeong, and S.G. Kim, in Proc. of Solid-State Sensor and Actuator Workshop (Hilton Head, South Carolina, June, 2004).
8. Y. Jeon, R. Sood, J.-H. Jeong, and S.G. Kim, Sensors and Actuators A: Physical, (in press).
9. B. Xu, Y. Ye, L.E. Cross, J. Bernstein, and R. Miller, Applied Physics Letters, 74, 3549–3551 (1999).10.1063/1.124157 ↗
10. J.J. Bernstein, J. Bottari, K. Houston, G. Kirkos, R. Miller, B. Xu, Y. Ye, and L.E. Cross, IEEE 1999 Ultrasonics Symposium (Lake Tahoe, NV, Oct. 18–20 1999).
11. G.K. Lesieutre, G.A. Ottman, and H.F. Hofmann, Journal of Sound and Vibration, 269, 991–1001 (2004).10.1016/S0022-460X(03)00210-4 ↗
12. H.A. Sodano, D.J. Inman, and G. Park, The Shock and Vibration Digest, 36, 3, PP197 (2004).10.1177/0583102404043275 ↗
13. B.L. Wardle, N.E. DuToit, and S.G. Kim, Intergrated Ferroelectric, accepted for publication.
14. F. Lu, H.P. Lee, and S.P. Lim, Smart Materials and Structures, 13(1), 57–63, (2004).10.1088/0964-1726/13/1/007 ↗
15. H. Hosaka, K. Itao, and S. Kuroda, MEMS ′94, Proc, IEEE Workshop on, (25–28 Jan. 1994).
16. DOT, “Initiatives on damage prevention,” http://www.rspa.dot.gov , (2003).
17. C.R. Farrar, S.W. Doebling, and D.A. Nix, Philosophical Transactions of the Royal Society of London A, 359, 131–149, (2001).10.1098/rsta.2000.0717 ↗