High-temperature piezoelectric crystals and devices
Source abstract
Abstract
Conventional piezoelectric materials such as quartz are widely used as high precision transducers and sensors based on bulk acoustic waves. However, their operation temperature is limited by the intrinsic materials properties to about 500°C. High-temperature applications are feasible by applying materials that retain their piezoelectric properties up to higher temperatures. Here, langasite (La3Ga5SiO14) and compounds of the langasite family are the most promising candidates, since they are shown to exhibit bulk acoustic waves up to at least 1400°C. The mass sensitivity of langasite resonators at elevated temperatures is about as high as that of quartz at room temperature. Factors limiting potential use of those crystals include excessive conductive and viscous losses, deviations from stoichiometry and chemical instability. Therefore, the objective of this work is to identify the related microscopic mechanisms, to correlate electromechanical properties and defect chemistry and to improve the stability of the materials by e.g. appropriate dopants. Further application examples such as resonant gas sensors are given to demonstrate the capabilities of high-temperature stable piezoelectric materials. The electromechanical properties of langasite are determined and described by a one-dimensional physical model. Key properties relevant for stable operation of resonators are found to be shear modulus, density, electrical conductivity and effective viscosity. In order to quantify their impact on frequency and damping, a generalized Sauerbrey equation is given. Mass and charge transport in single crystalline langasite are correlated with langasite’s defect chemistry and electromechanical properties. First of all, the dominant charge carriers are identified. Undoped langasite shows predominant ionic conduction at elevated temperatures. As long as the atmosphere is nearly hydrogen-free, the transport is governed by oxygen movement. A dominant role of hydrogen is observed in hydrogenous atmospheres since the diffusion coefficient of hydrogen is orders of magnitude higher than that of oxygen. The loss in langasite is found to be governed up to about 650°C by viscoelastic damping related to the above mentioned movement of oxygen ions. Donor doping is shown to lower the loss contribution. Above 650°C the impact of the conductivity related loss becomes pronounced. Here, lowering the conductivity results generally in decreased losses. The evaluation of langasite’s applicability is focused on mapping the regimes of gas insensitive operation. The most relevant feature with respect to frequency fluctuations of resonator devices is the formation of oxygen vacancies. In nominally hydrogen free atmospheres the calculated frequency shift becomes pronounced below oxygen partial pressures of 10 − 17, 10 − 24 and 10 − 36 bar at 1000, 800 and 600°C, respectively. Water vapor is found to shift the resonance frequency at higher oxygen partial pressures. In the hydrogen containing atmospheres applied here, langasite can be regarded as a stable resonator material above 10 − 13 bar and 10 − 20 bar at 800 and 600°C, respectively. The incorporation of OH-groups determines the frequency shift.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Acoustic Wave Resonator Technologies · Ultrasonics and Acoustic Wave Propagation · Ferroelectric and Piezoelectric Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (100+)
Show source-provided references
1. M. Pereira da Cunha, R.J. Lad, T. Moonlight, G. Bernhardt, D.J. Frankel, in High Temperature Stability of Langasite Surface Acoustic Wave Devices. Proc. IEEE Int. Ultras. Symp. (2008), pp. 205–208
2. I. Shrena, D. Eisele, E. Mayer, L.M. Reindl, J. Bardong, M. Schmitt, SAW-Relevant Material Properties of Langasite in the Temperature Range from 25 to 750°C: New Experimental Results. Proc. IEEE Int. Ultras. Symp. (2008), pp. 209–212
3. H. Fritze, High-temperature bulk acoustic wave sensors. Meas. Sci. Technol. 22, 12002 (2011). 28 pp
4. O. Knacke, O. Kubaschewski, H. Hesselmann, Thermochemical Properties of Inorganic Substances (Springer, New York, 1991)
5. R.W. Cernosek, J.R. Bigbie, M.T. Anderson, J.H. Small, P.S. Sawyer, in High Temperature Hydrocarbon Gas Sensing with Mesoporous SiO 2 Thin Films on TSM Resonators. Solid-State Sensor and Actuator Workshop, Hilton Head Island, South Carolina, 8–11 November 199810.31438/trf.hh1998.87 ↗
6. D. Damjanovic, Materials for high temperature piezoelectric transducers. Curr. Opin. Solid State Mater. Sci. 3, 469–473 (1998)10.1016/S1359-0286(98)80009-0 ↗
7. L. Reindl, G. Scholl, T. Ostertag, H. Scherr, U. Wolff, F. Schmidt, Theory and application of passive SAW radio transponder as sensors. IEEE Trans. Ultrason. Ferroelectr. Freq. Control 45, 1281–1292 (1998)10.1109/58.726455 ↗
8. R. Fachberger, G. Bruckner, G. Knoll, R. Hauser, J. Biniasch, L. Reindl, Applicability of LiNbO3, langasite and GaPO4 in high temperature SAW sensors operating at radio frequencies. IEEE Trans. Ultrason. Ferroelectr. Freq. Control 51(11), 1427–1431 (2004)10.1109/TUFFC.2004.1367482 ↗
9. D.P. Birnie III, Analysis of diffusion in lithium niobate. J. Mater. Sci. 28, 302–315 (1993)10.1007/BF00357800 ↗
10. M. Strassburg, J. Senawiratne, N. Dietz, U. Haboeck, A. Hoffmann, V. Noveski, R. Dalmau, R. Schlesser, Z. Sitar, The growth and optical properties of large, high-quality AlN single crystals. J. Appl. Phys. 6, 5870–5876 (2004)10.1063/1.1801159 ↗
11. A.D. Katnani, K.I. Papathomas, Kinetics and initial stages of oxidation of aluminum nitride: thermogravimetric analysis and x-ray photoelectron spectroscopy study. J. Vac. Sci. Technol. A5, 1335–1340 (1987)10.1116/1.574765 ↗
12. A. Bellosi, E. Landi, A. Tampieri, Oxidation behavior of aluminum nitride. J. Mater. Res. 8, 565–572 (1993)10.1557/JMR.1993.0565 ↗
13. O. Ambacher, M.S. Brandt, R. Dimitrov, R.A. Fischer, A. Miehr, T. Metzger, M. Stutzmann, Thermal stability and desorption of group III nitrides prepared by MOCVD. J. Vac. Sci. Technol. 14, 3532–3542 (1996)10.1116/1.588793 ↗
14. K. Shimamura, H. Takeda, T. Kohno, T. Fukuda, Growth and characterization of lanthanum gallium silicate La3Ga5SiO14 single crystals for piezoelectric applications. J. Cryst. Growth 163, 388–392 (1996)10.1016/0022-0248(95)01002-5 ↗
15. B. Chai, J.L. Lefaucheur, Y.Y. Ji, H. Qiu, in Growth and Evaluation of Large Size LGS (La 3 Ga 5 SiO 14), LGN (La 3 Ga 5,5 Nb 0,5 O 14) and LGT (La 3 Ga 5,5 Ta 0,5 O 14) Single Crystals. IEEE Int. Freq. Contr. Symp. (1998), pp. 748–760
16. P.W. Krempl, Quartzhomeotypic gallium orthophosphate: a new high tech piezoelectric crystal. Ferroelectrics 202, 65–69 (1997)10.1080/00150199708213461 ↗
17. K. Jacobs, P. Hofmann, D. Klimm, J. Reichow, M. Schneider, Structural phase transformations in crystalline gallium orthophosphate. J. Solid State Chem. 149, 180–188 (2000)10.1006/jssc.1999.8520 ↗
18. F. Krispel, C. Reiter, J. Neubig, F. Lenzenhuber, P.W. Krempl, W. Wallnöfer, P.M. Worsch, in Properties and Applications of Singly Rotated GaPO 4 Resonators. IEEE Int. Freq. Contr. Symp. (2003), pp. 668–673
19. S. Uda, S.Q. Wang, N. Konishi, H. Inaba, J. Harada, Growth habits of 3 and 4-inch langasite single crystals. J. Cryst. Growth 237–239, 707–713 (2002)10.1016/S0022-0248(01)02007-3 ↗
20. P. Krempl, G. Schleinzer, W. Wallnöfer, Gallium phosphate, GaPO4: a new piezoelectric crystal material for high-temperature sensorics. Sens. Actuators, A 61, 361–363 (1997)10.1016/S0924-4247(97)80289-0 ↗
21. F. Krispel, H. Thanner, P. Krempl, C. Reiter, P. Worsch, W. Wallnof̈er, in GaP0 4 Resonators With Q Factors of Some Millions in the Fundamental Mode. IEEE International Frequency Control Symposium (2002), pp. 342–346
22. H. Fritze, O. Schneider, G. Borchardt, in High Temperature Bulk Acoustic Wave Properties of Gallium Orthophosphate and Langasite, Sensor 2003 Proceedings, (AMA Service GmbH) (2003)10.1039/B307503F ↗
23. K. Jacobs, P. Hofmann, D. Klimm, OH impurities in GaPO4 crystals: correlation between infrared absorption and mass loss during thermal treatment. J. Cryst. Growth 237–239, 837–842 (2002)10.1016/S0022-0248(01)02047-4 ↗
24. R.-U. Barz, M. Grassl, P. Gille, Study of anisotropic effects in hydrothermal growth of gallium orthophosphate single crystals. Ann. Chim. Sci. Mat. 26, 95–98 (2001)10.1016/S0151-9107(01)90019-4 ↗
25. K. Jacobs, P. Hofmann, J. Reichow, Physico-chemical aspects of the hydrothermal growth of GaPO4. Ann. Chim. Sci. Mat. 26, 85–90 (2001)10.1016/S0151-9107(01)90017-0 ↗
26. O. Cambon, P. Yot, D. Balitsky, A. Goiffon, E. Philippot, B. Capelle, J. Detaint, Crystal growth of GaPO4, a very promising material for manufacturing BAW devices. Ann. Chim. Sci. Mat. 26, 79–84 (2001)10.1016/S0151-9107(01)90016-9 ↗
27. S. Zhang, Y. Fei, B.H.T. Chai, E. Frantz, D.W. Snyder, X. Jiang, T.R. Shrout, Characterization of piezoelectric single crystal YCa4O(BO3)3 for high temperature applications. Appl. Phys. Lett. 92, 202905 (2008)10.1063/1.2936276 ↗
28. S. Zhang, E. Frantz, R. Xia, W. Everson, J. Randi, D.W. Snyder, T.R. Shrout, Gadolinium calcium oxyborate piezoelectric single crystals for ultrahigh temperature (>1000°C) applications. J. Appl. Phys. 104, 084103 (2008)10.1063/1.3000560 ↗
29. F. Yu, S. Zhang, X. Zhao, D. Yuan, Q. Wang, T.R. Shrout, High temperature piezoelectric properties of yttrium calcium oxyborate single crystals. Phys. Status Solidi - RRL 4, 103–105 (2010)10.1002/pssr.201004068 ↗
30. D. Cachau-Herreillat, J. Bennazha, A. Goiffon, A. Ibanez, E. Philippot, X-ray, DTA and crystal growth investigation on AlPO4-GaPO4 and AlPO4-AlAsO4 systems. Eur. J. Solid State Inorg. Chem. 29, 1295–1307 (1992)
31. H. Fritze, High temperature piezoelectric materials: Defect chemistry and electro-mechanical properties. J. Electroceramics 17, 625–630 (2006)10.1007/s10832-006-9735-1 ↗
32. J. Sauerwald, H. Fritze, E. Ansorge, S. Schimpf, S. Hirsch, B. Schmidt, in Electromechanical Properties of Langasite Structures at High Temperatures. International Workshop on Integrated Electroceramic Functional Structures, Berchtesgaden, Germany, 6–8 June 2005
33. B.V. Mill, Y.V. Pisarevsky, in Langasite-type Materials: From Dicovery to Present State. Proc. IEEE/EIA Int. Freq. Control Symp. (2000), pp. 133–144.
34. A.N. Gotalskaya, D.I. Drezin, V.V. Bezdelkin, V.N. Stassevich, in Pecularities of Technology, Physical Properties and Applications of New Piezoelectric Material Langasite (La 3 Ga 5 SiO 14). IEEE Int. Freq. Contr. Symp. (1993), pp. 339–347.
35. J. Bohm, E. Chilla, C. Flannery, H.-J. Fröhlich, T. Hauke, R. Heimann, M. Hengst, U. Straube, Czochralski growth and characterization of piezoelectric single crystals with langasite structure: LGS, LGN and LGT. Part II: Piezoelectric and elastic properties. J. Cryst. Growth 216, 293–298 (2000)10.1016/S0022-0248(00)00440-1 ↗
36. J. Boy, R. Besson, E. Bigler, R. Bourquin, B. Dulmet, in Theoretical and Experimental Studies of the Force-Frequency Effect in BAW LGS and LGT Resonators. IEEE Int. Freq. Contr. Symp. (2001), pp. 223–226
37. S. Ganschow, C. Cavalloni, P. Reiche, R. Uecker, Growth of La3Ga5SiO14: a modern material for high-temperature piezoelectric application. Proc. SPIE 2373, 55–58 (1995)10.1117/12.224988 ↗
38. H. Takeda, S. Tanaka, S. Izukawa, H. Shimizu, T. Nishida, T. Shiosaki, in Effective Substitution of Aluminum for Gallium in Langasite-type Crystals for A Pressure Sensor Use at High Temperature. IEEE Ultras. Symp. (2005), pp. 560–563
39. E.N. Domoroshchina, A.B. Dubovskii, G.M. Kuz’micheva, G.V. Semenkovich, Influence of point defects on the electrical conductivity and dielectric properties of langasite. Inorg. Mater. 41, 1378–1381 (2005)10.1007/s10789-005-0290-y ↗
40. H. Fritze, H.L. Tuller, G. Borchardt, T. Fukuda, High temperature properties of langasite. Mater. Res. Soc. Symp. Proc. 604, 65–70 (2000)10.1557/PROC-604-65 ↗
41. H. Fritze, H.L. Tuller, Langasite for high temperature bulk acoustic wave applications. Appl. Phys. Lett. 78, 976–977 (2001)10.1063/1.1345797 ↗
42. H. Fritze, H. Seh, H.L. Tuller, G. Borchardt, Operation limits of langasite high temperature nanobalances. J. Eur. Ceram. Soc. 21, 1473–1477 (2001)10.1016/S0955-2219(01)00044-9 ↗
43. J. Stade, L. Bohaty, M. Hengst, R.B. Heimann, Electro-optic, piezoelectric and dielectric properties of langasite (La3Ga5SiO14), langanite (La3Ga5.5Nb0.5O14) and langataite (La3Ga5.5Ta0.5O14). Cryst. Res. Technol. 37, 1113–1120 (2002)10.1002/1521-4079(200210)37:10<1113::AID-CRAT1113>3.0.CO;2-E ↗
44. D.R. Lide (ed.), CRC Handbook of Chemistry and Physics, 84th edn. (CRC Press, Boca Raton, 2003)
45. C. Klemenz, M. Berkowski, B. Deveaud-Pledran, D.C. Malocha, in Defect Structure of Langasite-type Crystals: A Challange for Applications. IEEE Int. Freq. Contr. Symp. (2002), pp. 301–306
46. R. Fachberger, E. Riha, E. Born, W. Ruile, P. Pongratz, S. Kronholz, in Homogeneity of Langasite and Langatate Wafers. IEEE Int. Freq. Contr. Symp. (2002), pp. 311–319
47. G.M. Kuz’micheva, V.B. Rybakov, E.N. Domoroshchina, A.B. Dubovskii, X-ray diffraction study of an inhomogeneous langasite (La3Ga5SiO14) crystal. Inorg. Mater. 38, 1040–1047 (2002)10.1023/A:1020585506932 ↗
48. G. Sauerbrey, Verwendung von Schwingquarzen zur Wägung dünner Schichten und zur Mikrowägung. Z. Phys. 155, 206–222 (1959)10.1007/BF01337937 ↗
49. E. Benes, Improved quartz microbalance technique. J. Appl. Phys. 56, 608–626 (1984)10.1063/1.333990 ↗
50. S.S. Narine, A.J. Slavin, Use of the quartz crystal microbalance to measure the mass of submonolayer deposits: Measuring the stoichiometry of surface oxides. J. Vac. Sci. Technol. A16, 1857–1862 (1998)10.1116/1.581118 ↗
51. IEEE Standard on Piezoelectricity, ANSI/IEEE Std. 176-1987 (The Institute of Electrical and Electronic Engineers, New York, 1988)
52. D.A. Berlincourt, D. Curran, H. Jaffe, in Physical Acoustics, Principles and Methods. Piezoelectric and Piezomagnetic Materials and their Function in Transducers, vol. 1, part A. (Academic, New York, 1964), Ch. 3, pp. 169–27010.1016/B978-1-4832-2857-0.50009-5 ↗
53. T. Ikeda, Fundamentals of Piezoelectricity (Oxford University Press, Oxford, 1990)
54. J. Vig, Quartz crystal resonators and oscillators (2001). www.ieee-uffc.org/freqcontrol/tutorials/ . Accessed 8 June 2001
55. D. Salt, Hy-Q Handbook of Quartz Crystal Devices (Van Nostrand Reinhold, Wokingham, 1987)
56. B. Zimmermann, R. Lucklum, P. Hauptmann, J. Rabe, S. Büttgenbach, Electrical characterisation of high-frequency thickness shear-mode resonators by impedance analysis. Sens. Actuators, B 76, 47–57 (2001)10.1016/S0925-4005(01)00567-6 ↗
57. K.W. Kwok, H.L.W. Chan, C.L. Choy, Evaluation of the material parameters of piezoelectric materials by various methods. IEEE Trans. Ultrason. Ferroelectr. Freq. Control 44(4), 733–742 (1997)10.1109/58.655188 ↗
58. J.G. Smith, Influence of moving domain walls and jumping lattice defects on complex material coefficients of piezoelectrics. IEEE Trans. Sonics Ultrason. SU-23(3), 168–174 (1976)
59. G. Arlt, The role of domain walls on the dielectric, elastic and piezoelectric properties of ferroelectric ceramics. Ferroelectrics 76, 451–458 (1987)10.1080/00150198708016967 ↗
60. W. Göpel, J. Hesse, J.N. Zehmel, Sensors, a comprehensive survey, vol. 7 (VCH, Weinheim, 1994)
61. H.F. Tiersten, Linear Piezoelectric Plate Vibration (Plenum, New York, 1969)10.1007/978-1-4899-6453-3 ↗
62. H. Fritze, M. Schulz, H. Seh, H.L. Tuller, Sensor application-related defect chemistry and electromechanical properties of langasite. Solid State Ion. 177, 2313–2316 (2006)10.1016/j.ssi.2006.02.008 ↗
63. B.A. Martin, H.E. Hager, Velocity profile on quartz crystals oscillating in liquids. J. Appl. Phys. 65, 2630–2635 (1989)10.1063/1.342772 ↗
64. G. Sauerbrey, Messung von Plattenschwingungen sehr kleiner Amplitude durch Lichtmodulation. Z. Phys. 178, 457–471 (1964)10.1007/BF01379475 ↗
65. J. Schreuer, J. Rupp, C. Thybaut, J. Stade, in Temperature Dependence of Elastic, Piezoelectric and Dielectric Properties of La 3 Ga 5 SiO 14 and La 3 Ga 5.5 Ta 0.5 O 14 : An Application of Resonant Ultrasound Spectroscopy. IEEE Ultras. Symp. (2002), pp. 360–363
66. T. Schneider, S. Doerner, P. Hauptmann, H. Fritze, D. Richter, Novel impedance interface for resonant high-temperature gas sensors. Sens. Actuators, B 111–112, 187–192 (2005)10.1016/j.snb.2005.06.034 ↗
67. C. Reiter, P.W. Krempl, H. Thanner, W. Wallnöfer, P.M. Worsch, Material properties of GaPO4 and their relevance for application. Ann. Chim. Sci. Mat. 26, 91–94 (2001)10.1016/S0151-9107(01)90018-2 ↗
68. Piezocryst GmbH, Data sheet: GaPO4 material constants, Update 11/2005 (2001). http://www.piezocryst.com . Accessed 14 August 2001
69. M. Schulz, H. Fritze, U. Straube, in Determination of Material Parameters of Langasite (La 3 Ga 5 SiO 14) at Elevated Temperatures. 345th Wilhelm and Else Heraeus Seminar: “Acoustic Wave Based Sensors: Fundamentals, Concepts, New Applications,” Bad Honnef, Germany, 11–13 April 2005
70. M. Schulz, Untersuchung der Eigenschaften von Langasit für Hochtemperaturanwendungen, Ph.D. thesis, Technische Unversität Clausthal, 2007
71. J.J. Martin, in Acoustic Loss in Cultured Quartz. IEEE Int. Freq. Contr. Symp. (1996), pp. 170–178
72. J.J. Martin, in High-temperature Acoustic Loss In Thickness-Shear Mode Quartz Resonators. IEEE/EIA Int. Freq. Contr. Symp. (2000), pp. 359–363
73. T. Norby, Solid-state protonic conductors: principles, properties, progress and prospects. Solid State Ion. 125, 1–11 (1999)10.1016/S0167-2738(99)00152-6 ↗
74. J. Crank, The Mathematics of Diffusion (Oxford University Press, Oxford, 1975)
75. T. Ishihara, H. Matsuda, Y. Takita, Oxide ion conductivity in doped NdAlO3 perovskite-type oxides. J. Electrochem. Soc. 141, 3444–3449 (1994)10.1149/1.2059351 ↗
76. N.J. Long, F. Lecarpentier, H.L. Tuller, Structure and electrical properties of Ni-substituted lanthanum gallate perovskites. J. Electroceram. 3(4), 399–407 (1999)10.1023/A:1009974116458 ↗
77. C. Klemenz, High-quality La3Ga5.5Ta0.5O14 and La3Ga5.5Nb0.5O14 LPE films for oscillators and resonators. J. Cryst. Growth 250, 34–40 (2003)10.1016/S0022-0248(02)02211-X ↗
78. D.P. Butt, Y. Park, T.N. Taylor, Thermal vaporization and deposition of gallium oxide in hydrogen. J. Nucl. Mater. 264, 71–77 (1999)10.1016/S0022-3115(98)00484-X ↗
79. B.A. Maksimov, S.S. Kazantsev, V.N. Molchanov, I.A. Verin, B.V. Mill, Crystal structure and microtwinning of monoclinic La3SbZn3Ge2O14 crystals of the langasite family. Crystallogr. Rep. 49, 585–590 (2004)10.1134/1.1780621 ↗
80. H. Seh, H.L. Tuller, Defects and transport in langasite I: acceptor-doped (La3Ga5SiO14). J. Electroceram. 16, 115–125 (2006)10.1007/s10832-006-4081-x ↗
81. H. Seh, H.L. Tuller, Defects and transport in langasite II: donor-doped La3Ga4.75Nb0.25SiO14. J. Electroceramics 15, 192–202 (2005)
82. H. Seh, H. Fritze, H.L. Tuller, Defect chemistry of langasite III: predictions of electrical and gravimetric properties and application to operation of high temperature crystal microbalance. J. Electroceramics 18, 130–147 (2007)
83. H. Seh, Langasite bulk acoustic wave resonant sensor for high temperature applications. Ph.D. thesis, Department of Materials Science and Engineering, MIT, Cambridge, MA, USA, 2005
84. K. Schulgasser, Relationship between single-crystal and polycrystal electrical conductivity. J. Appl. Phys. 47, 1880–1886 (1976)10.1063/1.322907 ↗
85. H. Kimura, S. Uda, X. Huang, S. Koh, in Equilibrium Phase diagram of Incongruent-Melting Langatate (La 3 Ta 0.5 Ga 5.5 O 14) and the Influence of Growth Atmosphere and Impurity Ir on the Resistivity of Langatate. 15th International Conference on Crystal Growth, Salt Lake City, USA, 12–17 August 2007 (preliminary abstract: http://www.crystalgrowth.us/iccg15 )
86. P.G. Shewmon, Diffusion in Solids (McGraw-Hill, New York, 1963)
87. J. Maier, Mass transport in the presence of internal defect reactions-concept of conservative ensembles: IV tracer diffusion and intercorrelation with chemical diffusion and ion conductivity. J. Am. Ceram. Soc. 76, 1228–1232 (1993)10.1111/j.1151-2916.1993.tb03746.x ↗
88. A. Kaminskii, B. Mill, G. Khodzhabagyan, A. Konstantinova, O.A.I., I. Silvestrova, Investigation of trigonal (La1 − x Nd x )3Ga5SiO14 crystals: I. Growth and optical properties. Phys. Stat. Sol. (A) 80, 387–398 (1983)10.1002/pssa.2210800142 ↗
89. I.H. Jung, Y.H. Kang, K. Joo, A. Yoshikawa, T. Fukuda, K. Auh, Ca3Ga2Ge4O14 (CGG)-type Sr3Nb0.95Ga3.083Si2O14 single crystal grown by the Czochralski method for piezoelectric applications. Mater. Lett. 51, 129–134 (2001)10.1016/S0167-577X(01)00278-6 ↗
90. B.H.T. Chai, A.N.P. Bustamante, M.C. Chou, in A New Class of Ordered Langasite Structure Compounds. IEEE/EIA Int. Freq. Contr. Symp. (2000), pp. 163–168
91. F.A. Kröger, The Chemistry of Imperfect Crystals (North Holland, Amsterdam, 1964)
92. Y.-M. Chiang, D.P. Birnie III, W.D. Kingery, Physical Ceramics (Wiley, New York, 1996)
93. R.H. Doremus, Diffusion of Reactive Molecules in Solids and Melts (Wiley, New York, 2002)
94. R. Glöckner, A. Neiman, Y. Larring, T. Norby, Protons in Sr3(Sr1 + x Nb2 − x )O9 − 3x/2 perovskite. Solid State Ion. 125, 369–376 (1999)10.1016/S0167-2738(99)00197-6 ↗
95. S. Suzuki, S. Nakashima, In-situ IR measurements of OH species in quartz at high temperatures. Phys. Chem. Miner. 26, 217–225 (1999)10.1007/s002690050180 ↗
96. F. Shimojo, K. Hoshino, H. Okazaki, Effects of doped acceptor ions on proton diffusion in perovskite oxides: a first-principles molecular dynamics simulation. J. Phys.: Condens. Matter 10, 285–294 (1998)10.1088/0953-8984/10/2/007 ↗
97. I.E. Animitsa, A.Y. Neiman, A.R. Sharafutdinov, M.G. Kazakova, Strontium tantalates with a perovskite structure: their conductivity and high-temperature interaction with water. Russ. J. Electrochem. 37, 266–272 (2001)10.1023/A:1009025313816 ↗
98. J. Schreuer, C. Thybaut, M. Prestat, J. Stade, E. Haussuhl, in Towards an Understanding of the Anomalous Electromechanical Behaviour of Langasite and Related Compounds at High Temperatures. IEEE Ultras. Symp. (2003), pp. 196–199
99. W. Johnson, S. Kim, S. Uda, in Acoustic Loss in Langasite and Langanite. Proc. IEEE Int. Freq. Contr. Symp. (2003), pp. 646–649
100. E. Ansorge, S. Schimpf, S. Hirsch, J. Sauerwald, H. Fritze, B. Schmidt, Evaluation of langasite (La3Ga5SiO14) as a material for high temperature microsystems. Sens. Actuators A 130–131, 393–396 (2006)10.1016/j.sna.2005.12.015 ↗