Deposition and gas sensing properties of tin oxide thin films by inductively coupled plasma chemical vapor deposition
Source abstract
Abstract
Tin oxide thin films have been deposited by a custom-designed inductively coupled plasma chemical vapor deposition (ICP-CVD) system in order to explore its application as an alternative approach for thin film gas sensor preparation. The as-deposited SnO2 films were of polycrystalline structure with nano-size grains of 12 nm. The SnO2 films exhibited a maximum sensitivity of 43 to 1000 ppm H2 at an optimum operating temperature of 350∘C. The response time of the SnO2 films was 12 s and full recovery was achievable.
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Research context
OpenAlex topics: Gas Sensing Nanomaterials and Sensors · ZnO doping and properties · Analytical Chemistry and Sensors
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