Three Dimensional Domain Structure in Epitaxial Barium Titanate Thin Films
Source abstract
Abstract
The three dimensional domain structure of barium titanate thin films was determined using a serial sectioning technique. The domain structure varied sharply through the film thickness, being primarily a-oriented near the substrate and increasingly c-oriented away from this interface. The variation in domain structure is explained in terms of a strain gradient due to partial relaxation of epitaxial coherency strains. The refractive index also varied through the film thickness. A simple relationship based on areal fraction of each domain type aptly described the changes in refractive index with domain structure. These results indicate the importance of understanding three-dimensional domain structure and its impact on film properties.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Acoustic Wave Resonator Technologies · Microwave Dielectric Ceramics Synthesis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (18)
Show source-provided references
1. D.M. Gill, C.W. Conrad, G. Ford, B.W. Wessels, and S.T. Ho, Appl. Phys. Lett., 71, 1783 (1997).10.1063/1.119397 ↗
2. V. Gopalan and R.J. Raj, J. Am. Ceram. Soc., 78, 1825 (1995).10.1111/j.1151-2916.1995.tb08895.x ↗
3. S. Chattopadhyay, A.R. Teren, J.H. Hwang, T.O. Mason, and B.W. Wessels, J. Mater. Res., 17, 669 (2002).10.1557/JMR.2002.0095 ↗
4. B.H. Hoerman, B.M. Nichols, and B.W. Wessels, Physical Review B, 65, 224110 (2002).10.1103/PhysRevB.65.224110 ↗
5. J.S. Speck and W. Pompe, Journal of Applied Physics, 76, 466 (1994).10.1063/1.357097 ↗
6. N.A. Pertsev and V.G. Koukhar, Physical Review Letters, 84, 3722 (2000).10.1103/PhysRevLett.84.3722 ↗
7. J. Slutsker, A. Artemev, and A.L. Roytburd, Journal of Applied Physics, 91, 9049 (2002).10.1063/1.1476969 ↗
8. Y.L. Li, S.Y. Hu, Z.K. Liu, and L.Q. Chen, Acta Materialia, 50, 395 (2002).10.1016/S1359-6454(01)00360-3 ↗
9. Y.L. Li, S.Y. Hu, Z.K. Liu, and L.Q. Chen, Applied Physics Letters, 81, 427 (2002).10.1063/1.1492025 ↗
10. V. Gopalan and R. Raj, Ferroelectrics, 200, 228 (1998).
11. V. Gopalan and R. Raj, J. Am. Ceram. Soc., 79, 3289 (1996).10.1111/j.1151-2916.1996.tb08107.x ↗
12. A. Gruverman, O. Auciello, and H. Tokumoto, Ann. Rev. Mater. Sci., 28, 101 (1998).10.1146/annurev.matsci.28.1.101 ↗
13. R.T. DeHoff, J. Microscopy, 131(pt. 3), 259 (1983).10.1111/j.1365-2818.1983.tb04254.x ↗
14. J. Alkemper and P.W. Voorhees, J. Microscopy, 201(pt. 3), 388 (2001).10.1046/j.1365-2818.2001.00832.x ↗
15. D.J. Towner, J. Ni, T.J. Marks, and B.W. Wessels, J. Crystal Growth, 255, 107 (2003).10.1016/S0022-0248(03)01195-3 ↗
16. J.A. Hooton and W.J. Merz, Physical Review, 98, 409 (1955).10.1103/PhysRev.98.409 ↗
17. C. Chou, C. Hou, and C. Li, J. Mater. Sci.?El. Mater., 10, 299 (1999).10.1023/A:1008976819063 ↗
18. D. Golini and S. Jacobs, Appl. Optics, 30, 2761 (1991).10.1364/AO.30.002761 ↗