(Ba,Ca)TiO3 PTCR Ceramics with LaNiO3 Thin-Film Electrodes: Preparation and Characterization of the Interface
Source abstract
Abstract
Conductive LaNiO3 thin film electrodes were deposited by chemical solution deposition (CSD) from nitrate solutions onto polycrystalline Al2O3 and (Ba,Ca)TiO3 PTCR ceramic substrates. The electrical properties of the LaNiO3 thin film on Al2O3 and of the interface consisting of LaNiO3 and the semiconductive oxide ceramic were investigated. The deposited LaNiO3 films were about 250 nm thick and consisted of nanosized particles. The resistivity of the LaNiO3 film was about 3 × 10-3Ωcm at 20°C. The PTCR ceramic consisted of μm sized particles and exhibited an electronic resistivity of about 10 Ωcm at 20°C and a steep increase of the resistivity of a few orders of magnitude above the Curie point at about 120°C. The electrical properties of the LaNiO3/PTCR interface were dominated by the properties of a barrier layer between the PTCR ceramic and the LaNiO3 electrode. The potential dependence of the impedance indicated that the barrier layer consisted of a depletion layer within the PTCR ceramic, when the flat band potential of LaNiO3 on the PTCR ceramic at about −250 mV was exceeded. Additionally the formation of an insulating layer at the LaNiO3 electrode has to be taken into account.
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Research context
OpenAlex topics: Magnetic and transport properties of perovskites and related materials · Ferroelectric and Piezoelectric Materials · Inorganic Chemistry and Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (28)
Show source-provided references
1. H. Landolt and R. Börnstein, Numerical Data and Functional Relationships in Science and Technology, Group 3, Volume 12, Part A: Garnets and Perovskites (Springer, Berlin, 1978).
2. R.J.H. Voorhoeve, D.W. Johnson, J.P. Remeika, and P.K. Gallagher, Science, 195, 827 (1977).10.1126/science.195.4281.827 ↗
3. G. Mader, H. Meixner, and P. Kleinschmidt, Siemens Forsch.-u. Entwickl.-Ber., 16, 76 (1987).
4. W. Heywang, Solid State Electronics, 3, 51 (1961).10.1016/0038-1101(61)90080-6 ↗
5. S.B. Desu and D.A. Payne, J. Am. Ceram. Soc., 73(11), 3398 (1990).10.1111/j.1151-2916.1990.tb06467.x ↗
6. E.J. Opila, G. Pfundtner, J. Maier, H.L. Tuller, and B.J. Wuensch, in Proceedings of Symposium A2 on Solid State Ionics of ICAM 91, edited by M. Balkanski, T. Takahashi and H.L. Tuller (North-Holland Elsevier Science Publishers B.V., Amsterdam, 1992).
7. N. Katsarakis, O. Fruhwirth, and W. Sitte, in Proceedings of 4th Euroceramics, 5, edited by G. Gusmano and E. Traversa (Gruppo Editoriale Faenza Editrice, Faenza, 1995), p. 89.
8. P. Shuk, A. Vecher, V. Kharton, L. Tichonova, H.D. Wiemhöfer, U. Guth, and W. Göpel, Sensors and Actuators B, 15–16, 401 (1993).10.1016/0925-4005(93)85218-Y ↗
9. O. Fruhwirth, A. Macher, and K. Reichmann, Investigation of Electrical Behavior of LaNi0.6Co0.4O3 on Perovskitic NTC-Ceramics, Key Engineering Materials, 132–136, 1345 (1997).10.4028/www.scientific.net/KEM.132-136.1345 ↗
10. A. Li, C. Ge, P. Lü, and N. Ming, Appl. Phys. Lett., 69(2), 161 (1996).10.1063/1.117358 ↗
11. M.S. Hedge, K.M. Satyalakshmi, R.M. Mallya, M. Rajeswari, and H. Zhang, J. Mater. Res., 9(4), 898 (1994).10.1557/JMR.1994.0898 ↗
12. E.L. Brosha, B.W. Chung, F.H. Garzon, I.D. Raistrick, R.J. Houlton, and M.E. Hawley, J. Electrochem. Soc., 142(5), 1702 (1995).10.1149/1.2048643 ↗
13. D.M. Tahan, A. Safari, and L.C. Klein, J. Am. Ceram. Soc., 79(6), 1593 (1996).10.1111/j.1151-2916.1996.tb08769.x ↗
14. J. Livage, M. Henry, and C. Sanchez, Progr. Sol. State Chem., 18(4), 259 (1988).10.1016/0079-6786(88)90005-2 ↗
15. M. Klee, in Proceedings of Electroceramics IV, edited by R. Waser (Augustinus Buchhandlung, Aachen, 1994), p. 1225.
16. K.P. Rajeev, G.V. Shivashankar, and A.K. Raychaudhuri, Sol. Stat. Commun., 79(7), 591 (1991).10.1016/0038-1098(91)90915-I ↗
17. K. Sreedhar, J.M. Honig, M. Darwin, M. McElfresh, P.M. Shand, J. Xu, B.C. Crooker, and J. Spalek, Phys. Rev. B, 46(10), 6382 (1992).10.1103/PhysRevB.46.6382 ↗
18. P. Ganguly and C.N.R. Rao, Mat. Res. Bull., 8, 405 (1973).10.1016/0025-5408(73)90044-5 ↗
19. P. Ganguly, N.Y. Vasanthacharya, C.N.R. Rao, and P.P. Edwards, J. Solid State Chem., 54, 400 (1984).10.1016/0022-4596(84)90171-3 ↗
20. J. Drennan, C.P. Tavares, and B.C.H. Steele, Mat. Res. Bull., 17, 621 (1982).10.1016/0025-5408(82)90044-7 ↗
21. A. Li, C. Ge, P. Lü, and N. Ming, Appl. Phys. Lett., 68(10), 1347 (1996).10.1063/1.115930 ↗
22. D.Y. Wang and K. Umeya, J. Am. Ceram. Soc., 74(2), 280 (1991).10.1111/j.1151-2916.1991.tb06875.x ↗
23. J. Daniels, K.H. Härdtl, and R. Wernicke, Philips techn. Rdsch., 38(1), 1 (1979).
24. S.M. Sze, Physics of Semiconductor Devices, 2nd Edition (John Wiley and Sons, New York, 1981).
25. J.F. Dewald, J. Phys. Chem. Solids, 14, 155 (1960).10.1016/0022-3697(60)90223-7 ↗
26. Y.Y. Lu, C.H. Lai, and T.Y. Tseng, J. Am. Ceram. Soc., 77(9), 2461 (1994).10.1111/j.1151-2916.1994.tb04623.x ↗
27. M.S. Correia and J.L. Baptista, in Ceramics Today – Tomorrow's Ceramics, edited by P. Vincenzini (Elsevier Science Publishers, Amsterdam, 1991), p. 2073.
28. S.B. Desu and D.A. Payne, J. Am. Ceram. Soc., 73(11), 3416 (1990).10.1111/j.1151-2916.1990.tb06469.x ↗