journal article·2013-10Open access

Influences of ScTa co-substitution on the properties of Ultra-high temperature Bi3TiNbO9-based piezoelectric ceramics

Zhi-Gang Gai, Ming-Lei Zhao, Wen-Bin Su, Chun-Lei Wang, Jian Liu, Jia-Liang Zhang

Journal of Electroceramics· Volume 31· Issue 1-2

Abstract

The effect of (Sc,Ta) doping on the properties of Bi 3 TiNbO 9 -based ceramics was investigated. The (Sc,Ta) modification greatly improves the piezoelectric activity of Bi 3 TiNbO 9 -based ceramics and significantly decreases the dielectric dissipation. The d 33 of Bi 3 (Ti 0.96 Sc 0.02 Ta 0.02 )NbO 9 was found to be 12 pC/N, the highest value among the Bi 3 TiNbO 9 -based ceramics and almost 2 times as much as the reported d 33 values of the pure BTNO ceramics (~6pC/N). The high T C (higher than 900 °C) and stable piezoelectric and dielectric properties, demonstrating that the (Sc,Ta) modified Bi 3 Ti 1−x Sc x/2 Ta x/2 NbO 9 -based material a candidate for ultrahigh temperature applications. The new (ScTa) modification has an important typical significance, the way should be used for reference in constructing the new high performance materials.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Ferroelectric and Piezoelectric Materials · Acoustic Wave Resonator Technologies · Microwave Dielectric Ceramics Synthesis

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (25)

Show source-provided references
1. E.C. Subbarao, J. Phys. Chem. Solids. 23, 665 (1962)10.1016/0022-3697(62)90526-7 ↗
2. T. Takenaka, K. Sakata, J. Appl. Phys. 55, 1092 (1984)10.1063/1.333198 ↗
3. A. Ando, M. Kimura, Y. Sakabe, Jpn. J. Appl. Phys. 42, 520 (2003)10.1143/JJAP.42.520 ↗
4. R.Z. Hou, X.M. Chen, J. Mater. Res. 20, 2354 (2005)10.1557/jmr.2005.0287 ↗
5. R.Z. Hou, X.M. Chen, Solid State Commun. 130, 469 (2004)10.1016/j.ssc.2004.02.044 ↗
6. Y. Noguchi, I. Miwa, Y. Goshima, M. Miyayama, Jpn. J. Appl. Phys. 39, L1259 (2000)10.1143/JJAP.39.L1259 ↗
7. Y. Yao, C. Song, P. Bao, D. Su, X. Lu, J. Appl. Phys. 95, 3126 (2004)10.1063/1.1649456 ↗
8. Z. Zhang, H. Yan, X. Dong, Y. Wang, Mater. Res. Bull. 38, 241 (2003)10.1016/S0025-5408(02)01032-2 ↗
9. R.W. Wolfe, R.E. Newnham, D.K. Smith, Ferroelectrics 3, 11971 (2004)
10. A. Moure, L. Pardo, C. Alemany, J. Eur. Ceram. Soc. 21, 1399 (2001)10.1016/S0955-2219(01)00027-9 ↗
11. Z.Y. Zhou, X.L. Dong, H. Chen, H.X. Yan, J. Am. Ceram. Soc. 89, 1756 (2006)10.1111/j.1551-2916.2006.00957.x ↗
12. T. Takenaka, K. Sakata, Jpn. J. Appl. Phys. 24, 730 (1985)10.7567/JJAPS.24S2.730 ↗
13. Z.X. Cheng, X.L. Wang, Appl. Phys. Lett. 90, 222902 (2007)10.1063/1.2743910 ↗
14. R. Aoyagi, H. Takeda, S. Okamura, T. Shiosaki, Mater. Res. Bull. 38, 25 (2003)10.1016/S0025-5408(02)01001-2 ↗
15. H.X. Yan, C.G. Li, J.G. Zhou, Jpn. J. Appl. Phys. 40, 6501 (2001)10.1143/JJAP.40.6501 ↗
16. Z.X. Cheng, X.L. Wang, Appl. Phys. Lett. 89, 2221918 (2006)
17. Z.G. Gai, J.F. Wang, Appl. Phys. Lett. 90, 052911 (2007)10.1063/1.2450669 ↗
18. S.J. Zhang, Solid State Commun. 140, 154 (2006)10.1016/j.ssc.2006.08.007 ↗
19. Z.X. Cheng, X.L. Wang, J. Phys. D. Appl. Phys. 43, 242001 (2010)10.1088/0022-3727/43/24/242001 ↗
20. M. Matsushita, R. Aoyagi, H. Takeda, Jpn. J. Appl. Phys. 43, 7164 (2004)10.1143/JJAP.43.7164 ↗
21. R. Aoyagi, S. Inai, Y. Hiruma, T. Takenaka, Jpn. J. Appl. Phys. 44, 7055 (2005)10.1143/JJAP.44.7055 ↗
22. Z.X. Cheng, X.L. Wang, J. Appl. Phys. 107, 084105 (2010)10.1063/1.3374709 ↗
23. S.J. Zhang, F.P. Yu, J. Am. Chem. Soc. 94, 3153 (2011)
24. J.P. Mercurio, A. Souirti, M. Manier, Mater. Res. Bull. 27, 123 (1992)10.1016/0025-5408(92)90050-A ↗
25. L.V. Korzunova, L.A. Shebanov, Ferroelectrics 93, 111 (1989)10.1080/00150198908017332 ↗