PZT thick films on different ceramic substrates; piezoelectric measurements

The piezoelectric, microstructural and electrical characteristics of thick PZT films on relatively inert alumina substrates and on two LTCC tapes, i.e., Du Pont 951 and Electro Science Labs 41020 were studied. A thick-film paste was prepared from the pre-reacted PZT powder (PbZr0.53Ti0.47O3) and printed and fired on LTCC tapes and on alumina substrates, respectively. Dielectric permittivities, dielectric losses, remnant polarizations and coercive fields were measured. The dielectric constants (100–150) of thick films fired on LTCC substrates are low. The piezoelectric coefficients d 33 were measured by different methods, i.e. Berlincourt piezometer, interferometry and piezoresponse force microscope (PFM). The d 33 values on LTCC substrates are low (30–70 pm/V) as compared with values obtained on alumina substrates (around 120 pm/V). Lower dielectric constants and piezoelectric coefficients d 33 of films on LTCC substrates are attributed to the formation of phases with a low permittivity due to the diffusion of silica from LTCC substrates into PZT films. The d 33 constants of samples with different thicknesses of PZT layers (from 20 to 160 μm) at first increase with the increasing thickness of PZT layers and then decrease for thicker films. As the cracks in the structure were not observed the reason for the decreasing d 33 values for thicker films is still unclear.