journal article·1988

Growth and characterization of InAs/GaAs monolayer structures

Takashi Fukui

Journal of Crystal Growth· Volume 93· Issue 1-4
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (13)

Show source-provided references
1. Gossard · Appl. Phys. Letters · 1976 · 29 · 32310.1063/1.89082 ↗
2. Gossard · Thin Solid Films · 1979 · 57 · 310.1016/0040-6090(79)90393-6 ↗
3. Chelikowsky · Phys. Rev. · 1976 · B13 · 82610.1103/PhysRevB.13.826 ↗
4. Gomyo · Appl. Phys. Letters · 1987 · 50 · 67310.1063/1.98062 ↗
5. Yao · Japan. J. Appl. Phys. · 1983 · 22 · L68010.1143/JJAP.22.L680 ↗
6. Fukui · Japan. J. Appl. Phys. · 1984 · 23 · L52110.1143/JJAP.23.L521 ↗
7. Fukui · 1986 · 397
8. Razeghi · Appl. Phys. Letters · 1987 · 51 · 221610.1063/1.98944 ↗
9. Ishibashi · J. Appl. Phys. · 1985 · 58 · 269110.1063/1.335905 ↗
10. Fukui · Japan. J. Appl. Phys. · 1984 · 23 · L20810.1143/JJAP.23.L208 ↗
11. Taguchi · Phys. Rev. · 1987 · B36 · 169610.1103/PhysRevB.36.1696 ↗
12. H. Oyanagi, T. Fukui, T. Matsushita, T. Yao, T. Ishiguro, H. Saito and K. Sugii, to be submitted.
13. Samuelson · J. Physique · 1982 · 43 · C510.1051/jphyslet:019820043010500 ↗