Selective molecular beam epitaxy (MBE) growth of GaAs/AlAs ridge structures containing 10nm scale wires and side quantum wells (QWs) and their stimulated emission characteristics
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor Lasers and Optical Devices · Photonic and Optical Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (11)
Show source-provided references
1. Kapon · Phys. Rev. Lett. · 1989 · 63 · 43010.1103/PhysRevLett.63.430 ↗
2. Shen · Jpn. J. Appl. Phys. · 1994 · 32 · L111710.1143/JJAP.32.L1117 ↗
3. Koshiba · J. Appl. Phys. · 1994 · 76 · 413810.1063/1.357364 ↗
4. S. Koshiba, H. Noge, H. Akiyama, Y. Nakamura, A. Shimizu, H. Sakaki, in: T. Ikegami, F. Hasegawa, Y. Takeda (Eds.), Gallium Arsenide and Related Compounds 1992, Inst. Phys. Conf. Ser., vol. 129, IOP Publishing, Bristol, 1993 p. 931.
5. Koshiba · Appl. Phys. Lett. · 1994 · 64 · 36310.1063/1.111967 ↗
6. Akiyama · Phys. Rev. Lett. · 1994 · 72 · 92410.1103/PhysRevLett.72.924 ↗
7. Koshiba · J. Crystal Growth · 1995 · 150 · 32210.1016/0022-0248(95)80228-5 ↗
8. Koshiba · J. Crystal Growth · 1997 · 175/176 · 80310.1016/S0022-0248(96)01204-3 ↗
9. Arakawa · Appl. Phys. Lett. · 1982 · 40 · 93910.1063/1.92959 ↗
10. Wegscheider · Phys. Rev. Lett. · 1993 · 71 · 407110.1103/PhysRevLett.71.4071 ↗
11. Watanabe · Appl. Phys. Lett. · 1998 · 73 · 51110.1063/1.121917 ↗