journal article·1991-05Open access

Luminescence and transport properties of high quality InP grown by CBE between 450 and 550°C

A. Rudra, J.F. Carlin, M. Proctor, M. Ilegems

Journal of Crystal Growth· Volume 111· Issue 1-4

Abstract

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Research context

OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor materials and devices · Quantum and electron transport phenomena

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References (13)

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