journal article·1999-04

Formation and optical properties of InGaN/GaN nano-structures grown on amorphous Si substrates by MOCVD

J. Wang, M. Nozaki, M. Lachab, R.S. Qhalid Fareed, Y. Ishikawa, T. Wang, Y. Naoi, S. Sakai

Journal of Crystal Growth· Volume 200· Issue 1-2
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Abstract

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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Metal and Thin Film Mechanics · Semiconductor materials and devices

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References (16)

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