The effect of temperature on the epitaxial quality of bilayers of iridium silicide and SiGe deposited on Si(100) in ultrahigh vacuum
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Semiconductor materials and interfaces · Surface and Thin Film Phenomena · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (15)
Show source-provided references
1. Tsaur · IEEE Electron Device Letters EDL-9 · 1988 · 10010.1109/55.2055 ↗
2. Tsaur · IEEE Electron Device Letters EDL-9 · 1988 · 65010.1109/55.20425 ↗
3. Tsaur · IEEE Electron Device Letters EDL-10 · 1989 · 36110.1109/55.31757 ↗
4. Tsaur · IEEE Electron Device Letters EDL-11 · 1990 · 41510.1109/55.62974 ↗
5. Petersson · J. Appl. Phys. · 1979 · 50 · 335710.1063/1.326325 ↗
6. Ohdomari · J. Appl. Phys. · 1979 · 50 · 702010.1063/1.325860 ↗
7. Infrared Sensors and Sensor Fusion10.1117/12.940562 ↗
8. Lin · Thin Solid Films · 1990 · 184 · 34310.1016/0040-6090(90)90430-L ↗
9. Kanaya · Japan. J. Appl. Phys. · 1989 · 28 · L54410.1143/JJAP.28.L544 ↗
10. Kanaya · Japan. J. Appl. Phys. · 1990 · 29 · L85010.1143/JJAP.29.L850 ↗
11. Yang · J. Crystal Growth · 1992 · 121 · 71710.1016/0022-0248(92)90578-7 ↗
12. Ishizaka · J. Electrochem. Soc. · 1986 · 133 · 66610.1149/1.2108651 ↗
13. Engström · Acta Chem. Scand. · 1970 · 24 · 210910.3891/acta.chem.scand.24-2109 ↗
14. Engström · Acta Chem. Scand. A · 1987 · 41 · 23710.3891/acta.chem.scand.41a-0237 ↗
15. Bean · Appl. Phys. Letters · 1984 · 44 · 10210.1063/1.94571 ↗