journal article·1991-04

Model for defect-free epitaxial lateral overgrowth of Si over SiO2 by liquid phase epitaxy

Ralf Bergmann

Journal of Crystal Growth· Volume 110· Issue 4
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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Semiconductor materials and devices · Silicon and Solar Cell Technologies · Advanced Surface Polishing Techniques

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References (17)

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