journal article·1989-10

Effect of hydrogen molecules on growth rates of GaAs in gas source molecular beam epitaxy

Shigemitsu Maruno, Yoshinori Nomura, Hitoshi Ogata, Mitsunobu Gotoda, Yoshitaka Morishita

Journal of Crystal Growth· Volume 97· Issue 3-4
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Abstract

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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Photocathodes and Microchannel Plates · Semiconductor Quantum Structures and Devices

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References (16)

Show source-provided references
1. Tsang · Appl. Phys. Letters · 1984 · 45 · 123410.1063/1.95075 ↗
2. Tsang · J. Electron. Mater. · 1986 · 15 · 23510.1007/BF02659637 ↗
3. Kapitan · J. Vacuum Sci. Technol. · 1984 · B2 · 28010.1116/1.582805 ↗
4. Pütz · J. Crystal Growth · 1986 · 74 · 29210.1016/0022-0248(86)90118-1 ↗
5. Tokumitsu · Japan. J. Appl. Phys. · 1985 · 24 · 118910.1143/JJAP.24.1189 ↗
6. Horiguchi · Japan. J. Appl. Phys. · 1986 · 25 · L97910.1143/JJAP.25.L979 ↗
7. Chiu · Appl. Phys. Letters · 1987 · 51 · 110910.1063/1.98755 ↗
8. Kobayashi · Appl. Phys. Letters · 1987 · 51 · 190710.1063/1.98507 ↗
9. Kimura · Japan. J. Appl. Phys. · 1987 · 26 · 671
10. Tsang · Appl. Phys. Letters · 1987 · 50 · 137610.1063/1.97861 ↗
11. Chiu · J. Appl. Phys. · 1987 · 62 · 230210.1063/1.339489 ↗
12. Briones · Japan. J. Appl. Phys. · 1985 · 24 · L47810.1143/JJAP.24.L478 ↗
13. Pretzer · Surface Sci. · 1966 · 4 · 26510.1016/0039-6028(66)90006-9 ↗
14. Tirtowidjojo · J. Crystal Growth · 1986 · 77 · 20010.1016/0022-0248(86)90302-7 ↗
15. Nagata · J. Crystal Growth · 1988 · 93 · 26510.1016/0022-0248(88)90538-6 ↗
16. Robertson · J. Appl. Phys. · 1988 · 62 · 87710.1063/1.342508 ↗