journal article·1989-02

Sn doping for InP and InGaAs grown by metalorganic molecular beam epitaxy using tetraethyltin

Yoshihiro Kawaguchi, Kiichi Nakashima

Journal of Crystal Growth· Volume 95· Issue 1-4
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Abstract

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Research context

OpenAlex topics: Integrated Circuits and Semiconductor Failure Analysis · Semiconductor materials and devices · Molecular Junctions and Nanostructures

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References (9)

Show source-provided references
1. Tsang · J. Appl. Phys. · 1986 · 60 · 418210.1063/1.337503 ↗
2. Heinecke · J. Crystal Growth · 1987 · 81 · 27010.1016/0022-0248(87)90403-9 ↗
3. Kimura · J. Crystal Growth · 1987 · 81 · 27610.1016/0022-0248(87)90404-0 ↗
4. Kawaguchi · Appl. Phys. Letters · 1987 · 50 · 124310.1063/1.97922 ↗
5. Walkiewicz · J. Appl. Phys. · 1980 · 51 · 265910.1063/1.327925 ↗
6. Takeda · 1982
7. Ploog · J. Vacuum Sci. Technol. · 1978 · 15 · 25510.1116/1.569563 ↗
8. Kennedy · IBM J. Res. Develop. · 1968 · 12 · 39910.1147/rd.125.0399 ↗
9. S. Uehara, M. Ikeda, Y. Kawaguchi, Y. Akahori and S. Hata, ECOC'88.