journal article·1998-10

Microstructure evolution of GaN buffer layer on MgAl2O4 substrate

H.-F. Yang, P.-D. Han, L.-S. Cheng, Z. Zhang, S.-K. Duan, X.-G. Teng

Journal of Crystal Growth· Volume 193· Issue 4
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Abstract

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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties

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References (14)

Show source-provided references
1. Nakamura · 1997
2. Nakamura · J. Crystal Growth · 1997 · 170 · 1110.1016/S0022-0248(96)00503-9 ↗
3. Kuramata · Appl. Phys. Lett. · 1995 · 67 · 252110.1063/1.114445 ↗
4. Asif Khan · Appl. Phys. Lett. · 1996 · 69 · 241810.1063/1.117656 ↗
5. Nakamura · Appl. Phys. Lett. · 1996 · 68 · 210510.1063/1.115599 ↗
6. George · Appl. Phys. Lett. · 1996 · 68 · 33710.1063/1.116708 ↗
7. Sun · Appl. Phys. Lett. · 1996 · 68 · 112910.1063/1.115735 ↗
8. Kapolnek · Appl. Phys. Lett. · 1995 · 67 · 154110.1063/1.114486 ↗
9. Wu · Appl. Phys. Lett. · 1996 · 68 · 137110.1063/1.116083 ↗
10. Northrup · Phys. Rev. Lett. · 1996 · 77 · 10310.1103/PhysRevLett.77.103 ↗
11. Sverdlov · Appl. Phys. Lett. · 1995 · 67 · 206310.1063/1.115079 ↗
12. Wu · Appl. Phys. Lett. · 1996 · 68 · 137110.1063/1.116083 ↗
13. Cullis · Phys. Rev. Lett. · 1995 · 75 · 236810.1103/PhysRevLett.75.2368 ↗
14. Ning · J. Mater. Res. · 1996 · 11 · 58010.1557/JMR.1996.0071 ↗