Microstructure evolution of GaN buffer layer on MgAl2O4 substrate
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (14)
Show source-provided references
1. Nakamura · 1997
2. Nakamura · J. Crystal Growth · 1997 · 170 · 1110.1016/S0022-0248(96)00503-9 ↗
3. Kuramata · Appl. Phys. Lett. · 1995 · 67 · 252110.1063/1.114445 ↗
4. Asif Khan · Appl. Phys. Lett. · 1996 · 69 · 241810.1063/1.117656 ↗
5. Nakamura · Appl. Phys. Lett. · 1996 · 68 · 210510.1063/1.115599 ↗
6. George · Appl. Phys. Lett. · 1996 · 68 · 33710.1063/1.116708 ↗
7. Sun · Appl. Phys. Lett. · 1996 · 68 · 112910.1063/1.115735 ↗
8. Kapolnek · Appl. Phys. Lett. · 1995 · 67 · 154110.1063/1.114486 ↗
9. Wu · Appl. Phys. Lett. · 1996 · 68 · 137110.1063/1.116083 ↗
10. Northrup · Phys. Rev. Lett. · 1996 · 77 · 10310.1103/PhysRevLett.77.103 ↗
11. Sverdlov · Appl. Phys. Lett. · 1995 · 67 · 206310.1063/1.115079 ↗
12. Wu · Appl. Phys. Lett. · 1996 · 68 · 137110.1063/1.116083 ↗
13. Cullis · Phys. Rev. Lett. · 1995 · 75 · 236810.1103/PhysRevLett.75.2368 ↗
14. Ning · J. Mater. Res. · 1996 · 11 · 58010.1557/JMR.1996.0071 ↗