Flow modulation effect on N incorporation into films during chemical beam epitaxy growth
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Advanced Chemical Physics Studies · GaN-based semiconductor devices and materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (12)
Show source-provided references
1. Friedman · J. Cryst. Growth · 1998 · 195 · 40910.1016/S0022-0248(98)00561-2 ↗
2. Li · Appl. Phys. Lett. · 1999 · 75 · 189910.1063/1.124865 ↗
3. Suzuki · Thin Solid Films · 2007 · 515 · 500810.1016/j.tsf.2006.10.041 ↗
4. Kurtz · Appl. Phys. Lett. · 2003 · 82 · 263410.1063/1.1565500 ↗
5. Nishimura · Physica B · 2007 · 401 · 34310.1016/j.physb.2007.08.183 ↗
6. Saito · Thin Solid Films · 2008 · 516 · 351710.1016/j.tsf.2007.08.022 ↗
7. Nishimura · Jpn. J. Appl. Phys. · 2008 · 47 · 207210.1143/JJAP.47.2072 ↗
8. Miyoshi · Jpn. J. Appl. Phys. · 1997 · 36 · 711010.1143/JJAP.36.7110 ↗
9. Saito · Jpn. J. Appl. Phys. · 1996 · 35 · L164410.1143/JJAP.35.L1644 ↗
10. Yamauchi · Jpn. J. Appl. Phys. · 1993 · 32 · 336310.1143/JJAP.32.3363 ↗
11. Lee · J. Cryst. Growth · 2005 · 275 · e112710.1016/j.jcrysgro.2004.11.200 ↗
12. Nishimura · Jpn. J. Appl. Phys. · 2007 · 464 · 284