Crystal growth in the low-temperature deposition of polycrystalline silicon thin film

Abstract In this study, the microstructure and property of poly-Si film, deposited using hot wire chemical vapor deposition (HWCVD) were investigated. A consequence of the low a-Si content in the poly-Si film was crystallites with well developed facets. The crystallite morphology was rhombic pyramidal while EBSD analysis revealed the existence of (1 1 1) contact twin planes. The facets of the rhombic pyramidal crystallites were based on { 3 2 0 } and { 3 2 0 } * planes, which have Σ 3 twin relationship with respect to (1 1 1) contact twin plane.