MOVPE growth and characterization of InN/GaN single and multi-quantum well structures

Abstract We report on the growth of InN/GaN quantum well structures via metal organic vapour-phase epitaxy. From X-ray diffraction and transmission electron microscopy measurements we find that at 530 °C, the temperature optimal for InN growth, the quality of the GaN barriers is too poor and quantum well formation is not observed. However, InN quantum wells can be grown at a higher temperature of 570 °C, although with rough interfaces and evidence of In segregation. Though photoluminescence is obtained from all samples, no evidence of quantum size effects is seen.