journal article·2007-05

p-doping mechanism in HTCVD silicon carbide

A. Fiorucci, D. Moscatelli, M. Masi

Journal of Crystal Growth· Volume 303· Issue 1
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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Silicon Carbide Semiconductor Technologies · Semiconductor materials and devices · Thin-Film Transistor Technologies

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References (6)

Show source-provided references
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