Characterisation of epitaxial CdxHg1−xTe using electrolyte electroreflectance with in-situ electrochemical etching

L.E.A. Berlouis; L.M. Peter; D.J. Diskett; A.J. Avery; M.G. Astles; J. Giess; N.T. Gordon

doi:10.1016/0022-0248(90)90955-k

journal article·1990-04

Characterisation of epitaxial CdxHg1−xTe using electrolyte electroreflectance with in-situ electrochemical etching

L.E.A. Berlouis, L.M. Peter, D.J. Diskett, A.J. Avery, M.G. Astles, J. Giess, N.T. Gordon

Journal of Crystal Growth· Volume 101· Issue 1-4

Publisher page

Bibliographic record

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

Energy storage

OpenAlex topics: Advanced Semiconductor Detectors and Materials · Semiconductor Quantum Structures and Devices · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (11)

Show source-provided references

1. Mullin · J. Crystal Growth · 1981 · 55 · 9210.1016/0022-0248(81)90276-1 ↗

2. Irvine · J. Crystal Growth · 1981 · 55 · 10710.1016/0022-0248(81)90277-3 ↗

3. Berlouis · J. Appl. Phys. · 1987 · 62 · 451810.1063/1.339042 ↗

4. Zanio · J. Electron. Mater. · 1986 · 15 · 10310.1007/BF02649911 ↗

5. Svob · J. Appl. Phys. · 1975 · 46 · 425110.1063/1.321408 ↗

6. Aspnes · Surface Sci. · 1973 · 37 · 41810.1016/0039-6028(73)90337-3 ↗

7. Raccah · Appl. Phys. Letters · 1983 · 42 · 37410.1063/1.93944 ↗

8. Giess · J. Crystal Growth · 1985 · 72 · 12010.1016/0022-0248(85)90129-0 ↗

9. Townsend · RMCS Technical Report SEES · 1987 · 211

10. Materials Analysis by Ion Channeling

11. Barrett · Phys. Rev. · 1971 · B3 · 152710.1103/PhysRevB.3.1527 ↗