Optical microcavities fabricated by DBR overgrowth of pyramidal-shaped GaAs mesas
Source abstract
Abstract
Abstract Optical cavities have been fabricated by overgrowth of truncated GaAs pyramids with a distributed Bragg reflector. The success of this overgrowth depends strongly on the crystallographic orientation of the pyramid facets and shows best results for { 1 1 4 } A facets. In order to fabricate mesas with precisely such facets, a wet-chemical etching process including several selective etching steps has been established. To determine the optical properties of these resonators, InAs quantum dots have been used as an internal broad-band light source. The quality factors for optical modes have been determined to range up to 8000 and show a dependency on cavity width.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Photonic and Optical Devices · Semiconductor Lasers and Optical Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (16)
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