Growth of oriented BN films prepared by electron cyclotron resonance CVD

Abstract Oriented hBN films with their (0 0 0 2) basal plane lying on Si (1 0 0) substrate were prepared by electron cyclotron resonance chemical vapour deposition technique. Fourier transform infrared spectroscopy (FTIR) measurement shows that in this case the absorption peak of the B–N–B out-of-plane mode disappeared. X-ray diffraction result confines the orientation. The morphology by atomic force microscopy is also shown.