High quality GaN film growth on AlN buffer layer, pretreated with alternating pulsative supply of TMG and NH3

Jin Soo Hwang; Satoru Tanaka; Sohachi Iwai; Yoshinobu Aoyagi; Seeyearl Seong

doi:10.1016/s0022-0248(98)00893-8

journal article·1999-04

High quality GaN film growth on AlN buffer layer, pretreated with alternating pulsative supply of TMG and NH3

Jin Soo Hwang, Satoru Tanaka, Sohachi Iwai, Yoshinobu Aoyagi, Seeyearl Seong

Journal of Crystal Growth· Volume 200· Issue 1-2

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OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Ga2O3 and related materials

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