Lateral growth rate control of GaAs on patterned substrates by CCl4 and CBr4 during MOCVD
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OpenAlex topics: Semiconductor Quantum Structures and Devices · GaN-based semiconductor devices and materials · Semiconductor materials and devices
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References (12)
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1. Kuech · J. Crystal Growth · 1991 · 115 · 5210.1016/0022-0248(91)90711-D ↗
2. Hersee · J. Crystal Growth · 1986 · 77 · 31010.1016/0022-0248(86)90317-9 ↗
3. Bhat · J. Crystal Growth · 1988 · 93 · 85010.1016/0022-0248(88)90630-6 ↗
4. Dzurko · IEEE J. Quantum Electron · 1989 · 25 · 145010.1109/3.29280 ↗
5. Lee · Appl. Phys. Lett. · 1993 · 63 · 3053
6. Kim · J. Crystal Growth · 1995 · 156 · 16910.1016/0022-0248(95)00210-3 ↗
7. Kim · Appl. Phys. Lett. · 1995 · 67 · 187110.1063/1.114360 ↗
8. Kim · J. Crystal Growth · 1994 · 139 · 23110.1016/0022-0248(94)90171-6 ↗
9. Kim · J. Crystal Growth · 1995 · 146 · 48210.1016/0022-0248(94)00527-3 ↗
10. Kim · J. Crystal Growth · 1994 · 141 · 32410.1016/0022-0248(94)90233-X ↗
11. Hanna · Appl. Phys. Lett. · 1991 · 58 · 16410.1063/1.104960 ↗
12. Lee · J. Appl. Phys. · 1994 · 76 · 507910.1063/1.357219 ↗