In-situ selective-area epitaxy of a GaAs-based heterostructure using a GaAs oxide layer as a mask
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OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor materials and devices · Semiconductor materials and interfaces
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References (5)
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1. Aoyagi · J. Vacuum Sci. Technol. B · 1987 · 5 · 146010.1116/1.583842 ↗
2. Takahashi · Extended Abstracts 37th Spring Meeting Japan Societies for Applied Physics and Related Societies · 1990 · Vol. 1 · 227
3. Hiratani · Japan. J. Appl. · 1990 · 29 · L136010.1143/JJAP.29.L1360 ↗
4. Ohki · Japan. J. Appl. Phys. · 1989 · 28 · L148610.1143/JJAP.28.L1486 ↗
5. Akita · Proc. SPIE · 1990 · 1392 · 57610.1117/12.48963 ↗