journal article·1993-10

New damage-free patterning method of a GaAs oxide mask and GaAs selective growth using the metalorganic molecular beam epitaxy method

Seikoh Yoshida, Masahiro Sasaki

Journal of Crystal Growth· Volume 133· Issue 3-4
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Ion-surface interactions and analysis · Semiconductor materials and devices · Diamond and Carbon-based Materials Research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (17)

Show source-provided references
1. Hiratani · Japan. J. Appl. Phys. Letters · 1990 · 29 · 136010.1143/JJAP.29.L1360 ↗
2. Hiratani · J. Crystal Growth · 1991 · 115 · 7410.1016/0022-0248(91)90715-H ↗
3. Tokumitsu · J. Appl. Phys. · 1984 · 55 · 316310.1063/1.333344 ↗
4. Kamon · J. Crystal Growth · 1985 · 73 · 7310.1016/0022-0248(85)90332-X ↗
5. Temkin · Appl. Phys. Letters · 1989 · 54 · 146310.1063/1.101377 ↗
6. Taneya · Japan J. Appl. Phys. Letters · 1989 · 28 · 51510.1143/JJAP.28.L515 ↗
7. Akita · J. Vacuum Sci. Technol. · 1989 · 7 · 147110.1116/1.584514 ↗
8. Taneya · J. Appl. Phys. · 1990 · 67 · 429710.1063/1.344945 ↗
9. Kosugi · Japan. J. Appl. Phys. · 1990 · 29 · 229510.1143/JJAP.29.2295 ↗
10. Tanaka · Japan. J. Appl. Phys. · 1993 · 32 · 54010.1143/JJAP.32.540 ↗
11. Yoshida · Extended Abstracts 52th Autumn Meeting Japan. Soc. Applied Physics · 1991 · 288
12. M. Sasaki and S. Yoshida, J. Appl. Phys., submitted.
13. Tone · Japan. J. Appl. Phys. · 1992 · 31 · 72110.1143/JJAP.31.L721 ↗
14. Van Buuren · Appl. Phys. Letters · 1991 · 59 · 46410.1063/1.105437 ↗
15. Benassayag · Surface Sci. · 1987 · 191 · 36210.1016/0039-6028(87)90178-6 ↗
16. Clampitt · J. Vacuum Sci. Technol. · 1975 · 12 · 120410.1116/1.568496 ↗
17. Krohn · Appl. Phys. Letters · 1975 · 27 · 47910.1063/1.88540 ↗