journal article·1994-12

Heavy carbon doping in low-pressure metalorganic vapor phase epitaxy of GaAs using trimethylarsenic — a comparison between the carrier gases N2 and H2

Hilde Hardtdegen, Chr. Ungermanns, K. Wirtz, D. Guggi, J. Herion, Hildegard Siekmann, H. Lüth

Journal of Crystal Growth· Volume 145· Issue 1-4
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OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor Lasers and Optical Devices · Semiconductor materials and devices

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References (25)

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