A numerical investigation of the effects of iso- and counter-rotation on the shape of the VCz growth interface
Source abstract
Abstract
Abstract The flow in the GaAs and boron oxide melt in an equipment used for the vapour pressure controlled Czochralski (VCz) growth has been calculated. Two-dimensional-axisymmetric calculations have been performed by using the commercial general purpose program FIDAP TM . The influence of iso- and counter-rotation on the shape of the interface has been studied.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Solidification and crystal growth phenomena · Metallurgical Processes and Thermodynamics · nanoparticles nucleation surface interactions
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References (6)
Show source-provided references
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5. Modeling melt convection in phase-field simulations of solidification10.1006/jcph.1999.6323 ↗
6. Numerical simulation of the LEC-growth of GaAs crystals with account of high-pressure gas convection10.1016/S0022-0248(97)00266-2 ↗