journal article·1997-01

Characterisation of 2% mismatched InGaAs and InAsP layers, grown on different buffer layers and at different growth temperatures

M. D'Hondt, I. Moerman, P. Demeester

Journal of Crystal Growth· Volume 170· Issue 1-4
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Abstract

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Research context

OpenAlex topics: Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials · Advancements in Semiconductor Devices and Circuit Design

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References (8)

Show source-provided references
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2. OPTO'94
3. Di Forte-Poisson · J. Crystal Growth · 1992 · 124 · 78210.1016/0022-0248(92)90552-T ↗
4. Hamamatsu, Infrared Detectors, MCT Photocunductive Detectors, p. 21.
5. Chang · Appl. Phys. Lett. · 1992 · 60 · 112910.1063/1.106429 ↗
6. Kae-Nune · 1993 · 135
7. Wada · Jpn. J. Appl. Phys. · 1989 · 28 · L170010.1143/JJAP.28.L1700 ↗
8. Wisser · J. Appl. Phys. · 1992 · 71 · 323410.1063/1.350969 ↗