Electro-epitaxial lateral overgrowth of silicon from liquid-metal solutions
Source abstract
Abstract
Abstract Monocrystalline silicon films are formed on patterned, metal-masked silicon substrates by a liquid-phase electro-epitaxial lateral overgrowth process. More specifically, silicon films are grown from liquid–metal solutions (molten bismuth saturated with silicon) by current-induced crystallization on stripe-patterned, tungsten-masked (1 1 1) silicon substrates. Growth temperatures range from 800°C to 1150°C, and a current density of 2–20 A/cm 2 is imposed across the silicon/melt interface to effect growth. Continuous (over 1 cm 2 areas) epitaxial layers of silicon are achieved on tungsten-masked substrates patterned with 10-μm wide stripe openings spaced 100 μm apart. New types of solar cells and photodiodes, wherein the metal mask functions as a reflective “buried mirror” layer to increase optical coupling and internal quantum efficiency, are realized with this silicon liquid-phase electro-epitaxy process.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (19)
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