Study of dielectric relaxation and thermally activated a.c. conduction in glassy Se70Te30 and Se70Te28M2 (M = Ag, Zn and Cd) alloys
Source abstract
Abstract
A detailed study of conduction mechanism of glassy Se70Te30 and Se70Te28M2 (M = Ag, Zn and Cd) alloys has been carried out in terms of dielectric properties and a.c. conductivity. Temperature and frequency dependent dielectric constant, dielectric loss and σac for the same system were measured in the frequency spectrum, 1 kHz to 1 MHz and temperature range, 303–338 K. The a.c. conductivity (σac) is found to be proportional to ωs (s < 1). The temperature dependence of both a.c. conductivity and frequency exponent (s) is reasonably well interpreted by the correlated barrier hopping (CBH) model. We showed that the bi-polaron hopping is dominant over the potential barrier and estimated the density of defect states (DOS) at 10 kHz. We found a good agreement between bi-polaron conductivity and experimental results.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Glass properties and applications · Solid-state spectroscopy and crystallography
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Glass Science Laboratory, Department of Physics, Institute of Science, Banaras Hindu UniversityVaranasiIndia
Materials Science Laboratory, Department of Physics, Faculty of Science, Al-Balqa Applied UniversityAl-SaltJordan
Funding
Department of Science and Technology (DST), Delhi, India
References (27)
Show source-provided references
1. 10.1038/nmat233010.1038/nmat2330 ↗
2. 10.1166/rase.2015.108710.1166/rase.2015.1087 ↗
3. 10.1016/j.jnoncrysol.2015.03.02810.1016/j.jnoncrysol.2015.03.028 ↗
4. 10.1080/1478643710821640210.1080/14786437108216402 ↗
5. 10.1103/PhysRevB.42.566510.1103/PhysRevB.42.5665 ↗
6. 10.1103/PhysRevLett.28.144910.1103/PhysRevLett.28.1449 ↗
7. 10.1088/0022-3719/16/26/01310.1088/0022-3719/16/26/013 ↗
8. 10.1080/0141863780822644810.1080/01418637808226448 ↗
9. 10.1201/978142002384810.1201/9781420023848 ↗
10. 10.1080/1364281820824642910.1080/13642818208246429 ↗
11. 10.1080/1478643700822106110.1080/14786437008221061 ↗
12. Pollak M. · Proceedings of the International Conference on Physics of Semiconductor · 1962 · 276
13. 10.1016/j.jallcom.2007.09.01110.1016/j.jallcom.2007.09.011 ↗
14. 10.1080/1478643770823851710.1080/14786437708238517 ↗
15. 10.1051/jphys:0198100420201670010.1051/jphys:01981004202016700 ↗
16. Sharma J. · Turk. J. Phys. · 2011 · 35 · 349
17. Sharma J. · Glob. J. Sci. Front. Res. Phys. Space Sci. · 2013 · 13 · 1
18. 10.1016/j.matlet.2014.01.14610.1016/j.matlet.2014.01.146 ↗
19. 10.1016/j.solidstatesciences.2010.11.02510.1016/j.solidstatesciences.2010.11.025 ↗
20. 10.1016/j.cap.2011.07.03810.1016/j.cap.2011.07.038 ↗
21. 10.1016/j.matchemphys.2011.01.06710.1016/j.matchemphys.2011.01.067 ↗
22. 10.1080/01411594.2011.58262110.1080/01411594.2011.582621 ↗
23. 10.1016/0022-3093(79)90027-910.1016/0022-3093(79)90027-9 ↗
24. 10.1080/1478643770823851710.1080/14786437708238517 ↗
25. 10.1080/0001873870010197110.1080/00018738700101971 ↗
26. Choudhary N. · Turk. J. Phys. · 2005 · 29 · 119
27. 10.1080/0001873950010157610.1080/00018739500101576 ↗