journal article·2017-09Open access

Magnesiothermic reduction of silica glass substrate—Chemical states of silicon in the generated layers

Yuki Tsuboi, Shogo Ura, Katsumi Takahiro, Takashi Henmi, Arifumi Okada, Takashi Wakasugi, Kohei Kadono

Abstract

We applied magnesiothermic reduction to silica glass substrates at various conditions including solid state or solid-Mg liquid reaction, and solid-Mg vapor reaction. Magnesium silicide with highly oriented to the 〈110〉 direction against the substrate surface was obtained in the solid state reaction at temperatures from 600 °C to 700 °C using Mg grains while Si crystallites were obtained in the reaction with Mg film deposited on the glass substrate at 560 °C. On the other hand, in the reduction with Mg vapor at 575 °C, brown and amorphous layer was formed on the surface of the silica glass substrate. The layer was transparent in the visible and near-infrared regions, and showed an interference pattern in the transmission spectra, indicating the homogeneity of the layer. The thickness and refractive index were estimated as 770 nm and 1.94, respectively. As the reaction with Mg vapor proceeded further, Mg2Si and MgO crystallites were formed. Oxidation states and their depth profiles of silicon atoms in the layers were investigated by X-ray photoelectron spectroscopy. The silicon atoms in the brown and amorphous layer existed in intermediate oxidation states, −2 and +3. The reaction proceeding, the formal charge of the silicon atoms varied to −4 corresponding to Mg2Si and +2.
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Research context

OpenAlex topics: Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies · Semiconductor materials and interfaces

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Graduate School of Science and Technology Kyoto Institute of TechnologyMatsugasakiSakyo-kuKyoto606-8585Japan

Faculty of Electronics Kyoto Institute of TechnologyMatsugasakiSakyo-kuKyoto606-8585Japan

Faculty of Materials Science and Engineering Kyoto Institute of TechnologyMatsugasakiSakyo-kuKyoto606-8585Japan

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