journal article·2013-10

Interfacial reactions between Sn–3.0Ag–0.5Cu solder and Cu–xZn (x=0–35wt%) or Cu–xZn–yNi (x=20 and 25wt%, y=15 and 10wt%) substrates

Young Min Kim, Tae Jin Kim, Min Young Choi, Young-Ho Kim

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Abstract

Abstract The interfacial reactions of Sn–3.0Ag–0.5Cu (SAC 305) solder on Cu– x Zn ( x = 0 wt%, 10 wt%, 15 wt%, 30 wt%, and 35 wt%) substrates and Cu– x Zn– y Ni ( x = 20 wt% and 25 wt%, y = 10 wt% and 15 wt%) were investigated after soldering and isothermal aging. SAC 305 solder was reacted with Cu– x Zn and Cu– x Zn– y Ni substrates by dipping Cu– x Zn or Cu– x Zn– y Ni wires into molten solder at 250 °C for 90 s. After soldering, Cu 6 Sn 5 -based intermetallic compound (IMC) formed at the solder interfaces. After aging at 150 °C, a bi-layer structure of Cu 6 Sn 5 /Cu 3 Sn formed, and microvoids were observed in the Cu 3 Sn layer at the SAC/Cu solder interfaces. For SAC/Cu–Zn samples, Cu 6 (Sn, Zn) 5 was the predominant reaction product, and formation of Cu 3 Sn was not observed. Interfacial IMC growth was delayed as the Zn concentration increased. In addition, the Cu(Zn, Sn) phase formed at the Cu 6 (Sn, Zn) 5 /Cu–Zn interfaces in the Cu– x Zn substrates with a high Zn concentration (30 wt% and 35 wt%). In the case of the Cu– x Zn– y Ni samples, the major interfacial IMC was (Cu, Ni) 6 (Sn, Zn) 5 phase. The Ni atoms from the Cu– x Zn–Ni substrates participated in the interfacial reaction at the SAC/Cu– x Zn– y Ni interfaces and resulting in the formation of a thick and layered IMC phase, comparing to those at the SAC/Cu–Zn interfaces. Although the effect of Ni addition to the Cu–Zn substrates exhibited delayed IMC growth, the Zn concentration in the Cu– x Zn– y Ni substrates influenced the IMC growth behavior more than the Ni concentration.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Electronic Packaging and Soldering Technologies · Advanced Welding Techniques Analysis · Intermetallics and Advanced Alloy Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (29)

Show source-provided references
1. Anderson · J. Electron. Mater. · 2001 · 30 · 105010.1007/s11664-001-0129-5 ↗
2. Laurila · Mater. Sci. Eng. R. · 2010 · 68 · 110.1016/j.mser.2009.12.001 ↗
3. Wu · Mater. Sci. Eng. R. · 2004 · 44 · 110.1016/j.mser.2004.01.001 ↗
4. Kang · JOM · 2004 · 56 · 3410.1007/s11837-004-0108-4 ↗
5. Chiu · Proc. Electron. Compon. Technol. Conf. · 2004 · 1256
6. Seo · Proc. Electron. Compon. Technol. Conf. · 2011 · 84
7. Cho · J. Electron. Mater. · 2007 · 36 · 150110.1007/s11664-007-0254-x ↗
8. Wang · J. Electron. Mater. · 2010 · 39 · 263610.1007/s11664-010-1317-y ↗
9. Jee · J. Mater. Res. · 2007 · 22 · 187910.1557/jmr.2007.0234 ↗
10. Wang · Proc. Int. Conf. Electron. Packaging Technol. High Density Packaging · 2009 · 53410.1109/ICEPT.2009.5270694 ↗
11. Wang · J. Alloys Comp. · 2007 · 433 · 30210.1016/j.jallcom.2006.06.076 ↗
12. Roh · Proc. Int. Conf. Electron. Packaging · 2007
13. Oh · J. Mater. Res. · 2009 · 24 · 29710.1557/JMR.2009.0047 ↗
14. Cho · J. Alloys Comp. · 2009 · 474 · 51010.1016/j.jallcom.2008.06.141 ↗
15. Yu · J. Electron. Mater. · 2010 · 39 · 23010.1007/s11664-009-0992-z ↗
16. Kim · Electron. Mater. Lett. · 2010 · 6 · 15110.3365/eml.2010.12.151 ↗
17. Kim · J. Electron. Mater. · 2010 · 39 · 250410.1007/s11664-010-1379-x ↗
18. Kim · Proc. Electron. Compon. Technol. Conf. · 2009 · 1008
19. Hwang · Proc. Int. Conf. Electron. Packaging Technol. High Density Packaging · 2012 · 42610.1109/ICEPT-HDP.2012.6474650 ↗
20. Lee · Mater. Sci. Eng. A · 2002 · 333 · 2410.1016/S0921-5093(01)01820-2 ↗
21. Yang · J. Mater. Res. · 2006 · 21 · 243610.1557/jmr.2006.0320 ↗
22. Yu · J. Mater. Sci. · 2012 · 47 · 646710.1007/s10853-012-6581-1 ↗
23. Zeng · J. Appl. Phys. · 2005 · 97 · 02450810.1063/1.1839637 ↗
24. Takenaka · Mater. Sci. Eng. A · 2005 · 406 · 13410.1016/j.msea.2005.06.054 ↗
25. Feng · J. Electron. Mater. · 2002 · 31 · 18510.1007/s11664-002-0204-6 ↗
26. Yoon · J. Alloys Comp. · 2009 · 486 · 14210.1016/j.jallcom.2009.06.159 ↗
27. Nogita · Intermetallics · 2010 · 18 · 14510.1016/j.intermet.2009.07.005 ↗
28. Chen · J. Mater. Sci. · 2012 · 47 · 401210.1007/s10853-012-6254-0 ↗
29. Vuorinen · J. Electron. Mater. · 2008 · 37 · 79210.1007/s11664-008-0411-x ↗